2N5322_03

2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. The 2N5322 and 2N5323 are silicon planar epitaxial PNP transistors in jedec TO-39 metal case intended for high voltage medium power applications in industrial and commercial equipment. 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 The complementary NPN types are the 2N5320 and 2N5321 respectively 45° TO-39 (TO-205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEV VCEO VEBO IC IB Ptot Tstg,Tj Rthj-case Rthj-amb Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (VBE = 1.5v) Emitter – Base Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tamb = 25°C Tcase = 50°C Storage and Junction temperature 2N5322 -100V -100V -75V -6V 2N5323 -75V -75V -50V -5V -1.2A -1A 1W 10W –65 to +200°C THERMAL DATA Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3073 Issue 2 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO IEBO Collector Cut Off Current Emitter Cut Off Current Test Conditions VCB = -80V VCB = -60V VEB = -5V VEB = -4V VBE = 1.5V IE = 0 2N5322 IE Min. Typ. Max. Unit -0.5 -5 µA µA = 0 2N5323 -0.1 -0.5 -100 -75 -75 -50 -6 -5 = 0 2N5323 2N5322 2N5323 IC = 0 2N5322 IC IC = -0.1mA V V(BR)CEV Collector Emitter Breakdown Voltage IC = -10mA IB = 0 V(BR)CEO* Collector-Emitter Breakdown Voltage IE = -0.1mA IC = 0 2N5322 2N5323 V V(BR)EBO Emitter Base Breakdown Voltage IC = -500mA 2N5322 2N5323 V IB = -50mA 2N5322 2N5323 VCE(sat)* Collector Emitter Saturation Voltage IC = -500mA -0.7 -1.2 -1.1 -1.4 30 10 130 V VCE = -4V 2N5322 2N5323 VBE* Base Emitter Voltage IC = -500mA IC = -1A V VCE = -4V VCE = -2V 2N5322 hFE* DC Current Gain IC = -500mA — 40 50 100 ns 1000 250 MHz VCE = -4V 2N5323 fT ton toff Transistion Frequency Turn-On Time Turn Off Time IC = -50mA IC = -500mA IB1 = -50mA IC = -500mA VCE = -4V VCC = -30V VCC = -30V IB1=-IB2 = -50mA * Pulse test tp = 300µs , δ = 1 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3073 Issue 2