2N5338X_01

LAB MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) SEME 2N5338X 2N5339X NPN SILICON TRANSISTORS DESCRIPTION 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Storage Temperature Range Junction temperature 100V 100V 6V 5A 7A 1A 6W 1W –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2674 Issue: 2 LAB THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 29.2 175 SEME 2N5338X 2N5339X °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO ICEX ICEO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Test Conditions IE = 0 VBE = 1.5V IB = 0 IB = 0 IC = 2A IC = 5A IC = 2A IC = 5A IC = 0.5A VCE = 2V IC = 2A VCE = 2V IC = 5A VCE = 2V VCB = 100V VCE = 90V Tcase = 150°C VCE = 90V IC = 50mA IB = 0.2A IB = 0.5A IB = 0.2A IB = 0.5A 2N5338X 2N5339X 2N5338X 2N5339X 2N5338X 2N5339X VCE = 10V VCB = 10V VCC = 40V VCC = 40V Min. Typ. Max. 10 10 1 100 100 0.7 1.2 1.2 1.8 Unit µA µA mA µA V V V VCEO(sus)* Collector Emitter Sustaining Voltage VCE(sat)* VBE(sat)* Collector Emitter Saturation Voltage Base Emitter Voltage 30 60 30 60 20 40 30 250 200 2.5 200 MHz pF ns µs ns 150 240 — hFE* DC Current Gain fT CCBO ton ts tf Transistion Frequency Collector Base Capacitance Turn-on Time Storage Time Fall Time IC =0.5mA IE = 0 f = 0.1MHz IC = 2A IB1 = 0.2mA IC = 2A IB1 = - IB2 = 0.2A * Pulse test tp = 300µs , Duty Cycle 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2674 Issue: 2