2N5339LCC4
MECHANICAL DATA Dimensions in mm (inches)
NPN SILICON TRANSISTORS
≈ 2.16 (0.085)
1.27 (0.050) 1.07 (0.040)
9.14 (0.360) 8.64 (0.340)
12 13 14 15 16
1.39 (0.055) 1.02 (0.040)
11
7.62 (0.300) 7.12 (0.280)
17 18 1 2
0.76 (0.030) 0.51 (0.020)
10 9 8
FEATURES
• Hermetically sealed ceramic surface mount package • Small footprint • Simple drive requirements
7
6
5
4
3
1.65 (0.065) 1.40 (0.055)
0.33 (0.013) Rad. 0.08 (0.003)
1.39 (0.055) 1.15 (0.045)
0.43 (0.017) 0.18 (0.007 Rad.
LCC4 CERAMIC SURFACE MOUNT PACKAGE
Underside View Pads 6, 7, 8, 9, 10, 11, 12, 13. Pads 4,5 Pads 1,2,15,16,17,18 Pads 3,14 Source Gate Drain Not Connected
ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated
VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Storage Temperature Range Junction temperature 100V 100V 6V 5A 7A 1A 6W 1W –65 to +200°C 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2976 Issue: 1
2N5339LCC4
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 29.2 175 °C/W °C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
ICBO ICEX ICEO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current
Test Conditions
IE = 0 VBE = 1.5V IB = 0 IB = 0 IC = 2A IC = 5A IC = 2A IC = 5A IC = 0.5A VCE = 2V IC = 2A VCE = 2V IC = 5A VCE = 2V VCB = 100V VCE = 90V Tcase = 150°C VCE = 90V IC = 50mA IB = 0.2A IB = 0.5A IB = 0.2A IB = 0.5A 2N5338 2N5339 2N5338 2N5339 2N5338 2N5339 VCE = 10V VCB = 10V VCC = 40V VCC = 40V
Min.
Typ.
Max.
10 10 1 100 100 0.7 1.2 1.2 1.8
Unit
µA µA mA µA V V V
VCEO(sus)* Collector Emitter Sustaining Voltage VCE(sat)* VBE(sat)* Collector Emitter Saturation Voltage Base Emitter Voltage
30 60 30 60 20 40 30 250 200 2.5 200 MHz pF ns µs ns 150 240 —
hFE*
DC Current Gain
fT CCBO ton ts tf
Transistion Frequency Collector Base Capacitance Turn-on Time Storage Time Fall Time
IC =0.5mA IE = 0 f = 0.1MHz IC = 2A IB1 = 0.2mA IC = 2A
IB1 = - IB2 = 0.2A
* Pulse test tp = 300µs , Duty Cycle 1.5%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2976 Issue: 1
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