2N5415CSM4

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • • • Silicon Planar PNP Transistor Hermetic Ceramic Surface Mounted Package. Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) 2N5415 VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Junction Temperature Range Storage Temperature Range -200V -200V -4V 2N5416 -350V -300V -6V 1.0A 0.5A 1.0W 175°C -65 to +200°C THERMAL PROPERTIES (Each Device) Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Max. 150 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9226 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4, 2N5416CSM4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector-Base Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage Test Conditions IC = -10mA IC = -10mA RBE = 50Ω IC = -50mA IB = 0 VCB = -175V VCB = -280V VEB = -4V VEB = -6V IC = -50mA IC = -50mA IC = -50mA 2N5415 2N5416 2N5416 VCE = -150V 2N5415 2N5416 2N5415 2N5416 IB = -5mA VCE = -10V 2N5415 Min. -200 -300 -350 Typ. Max. Units V V(BR)CER ICEO (1) (1) -50 -50 -50 -20 -20 -0.5 -1.5 30 150 V µA ICBO (1) IEBO (1) VCE(sat) VBE (1) hFE (1) DC Current Gain VCE = -10V IC = -50mA VCE = -10V 2N5416 30 120 DYNAMIC CHARACTERISTICS Symbols fT Cobo hfe Parameters Transition Frequency Output Capacitance Small Signal Current Gain Test Conditions IC = -10mA VCB = -10V IC = -5mA VCE = -10V IE = 0 VCE = -10V f =5MHz f =1.0MHz f =1.0kHz Min. 15 Typ Max. Units MHz 25 25 pF - Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Se Coventry Road, Lutterworth, Leicestershire, LE17 4JB Se melab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9226 Issue 2 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4, 2N5416CSM4 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 3.81 ± 0.13 (0.15 ± 0.005) 1.27 ± 0.05 (0.05 ± 0.002) 4 1 0.23 min. (0.009) 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 (MO-041BA) Underside View PAD 1 – Collector PAD 3 – Emitter PAD 2 – N/C PAD 4 – Base Semelab Se Coventry Road, Lutterworth, Leicestershire, LE17 4JB Se melab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9226 Issue 2 Page 3 of 3