2N5663

SILICON POWER NPN TRANSISTOR 2N5663 • • • Fast Switching Transistor Hermetic TO-5 Metal Package Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VCEO VEBO IB IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Base Current Continuous Collector Current Tc = 25°C Total Power Dissipation at Derate above 25°C TA = 25°C Total Power Dissipation at Derate above 25°C Operating Junction Temperature Range Storage Temperature Range 400V 400V 300V 6V 0.5A 2A 17.5W 100mW/°C 1.0W 5.7mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC RθJA Parameters Thermal Resistance, Junction To Case Thermal Resistance, Junction To Ambient Max 10.0 175.0 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8761 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON POWER NPN TRANSISTOR 2N5663 ** This datasheet supersedes document 5384 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols ICBO Parameters Collector-Base Cut-Off Current Test Conditions VCB = 300V VCB = 400V IB = 0 VCE = 300V TA = 150°C IC = 10mA IC = 10mA IE = 10µA IC = 1.0A IC = 2A IC = 1.0A IC = 2A IC = 50mA IC = 0.5A IB =0.1A IB =0.4A IB = 0.1A IB = 0.4A VCE = 2V VCE = 5V TA = -55°C IC = 1.0A IC = 2A VCE = 5V VCE = 5V RBE =100 Min Typ Max 0.1 1.0 0.2 9 Units µA mA µA ICES V(BR)CEO V(BR)CER (1) Collector-Emitter Cut- off current Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage 300 400 6 0.4 0.8 1.2 1.5 25 25 10 15 5 75 V (1) V(BR)EBO VCE(sat) (1) VBE(sat) (1) Base-Emitter Saturation Voltage hFE (1) DC Current Gain DYNAMIC CHARACTERISTICS | hfe | Cobo ton toff Small signal forward-current transfer ratio Output Capacitance IC = 0.1A f = 10MHz VCB = 10V f = 1.0MHz IC = 0.5A VCC = 100V IE = 0 VCE = 5V 1.4 7 45 pF Turn-On Time Turn-Off Time 0.48 µs 1.5 IB1 = -IB2 = 25mA Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8761 Issue 1 Page 2 of 3 SILICON POWER NPN TRANSISTOR 2N5663 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-5 (TO-205AA) Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8761 Issue 1 Page 3 of 3