2N5667

2N5667

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N5667 - NPN BIPOLAR POWER SWITCHING - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5667 数据手册
2N5666 2N5667 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN BIPOLAR POWER SWITCHING TRANSISTORS 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES • FAST SWITCHING 5.08 (0.200) typ. • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 • JAN LEVEL SCREENING OPTIONS 45° APPLICATIONS • HIGH SPEED SWITCHING CIRCUITS • POWER AMPLIFIERS TO-39 (TO-205AD) Underside View 1 = Emitter 2 = Base 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) VCBO VCEO VEBO IB IC PD PD RθJC RθJA TJ , TSTG Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Base Current Collector Current Power Dissipation @ TC = 25°C Power Dissipation @ TA = 25°C Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Operating and Storage Junction Temperature Range 2N5666 250V 200V 2N5667 400V 300V 6V 1.0A 5.0A 26W 1.2W 6.73°C/W 145.8°C/W –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5382 Issue 3 2N5666 2N5667 ELECTRICAL CHARACTERISTICS - 2N5666 (TA = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)EBO ICER ICES ICBO VCE(sat) VBE(sat) Emitter – Base Breakdown Voltage Collector – Emitter Cut-off Current Collector – Emitter Cut-off Current Collector – Base Cut-off Current Collector – Emitter Saturation Voltage* Base – Emitter On Voltage* Test Conditions IE = 10µA VCE = 250V VCE = 200V VCB = 200V VCB = 250V IC = 3.0A IC = 5.0A IC = 3.0A IC = 5.0A IC = 0.5A IC = 1.0A IC = 3.0A IC = 5.0A VCB = 10V f = 10MHz IC = 0.5A IB1 = 30mA IC = 1.0A IC = 1.0A VCC = 100V VCC = 30V IB1 = -IB2 = 50mA VCE = 5V IB = 0.6A IB = 1.0A IB = 0.6A IB = 1.0A VCE = 2V VCE = 5V VCE = 5V VCE = 5V IE = 0A RB = 100Ω IB = 0 Min. 200 6.0 Typ. Max. Unit V 100 0.2 0.1 1.0 0.4 1.0 1.2 1.5 V µA mA Collector – Emitter Breakdown Voltage IC = 1mA 40 40 15 5 120 2.0 7.0 0.25 µs 1.5 pF — 120 — hFE DC Current Gain* Cobo [hfe] ton toff Output Capacitance Small Signal Current Gain Turn on time Turn off time 100kHz < f > 1MHz NOTES * Pulse Test: tp = 300µs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5382 Issue 3 2N5666 2N5667 ELECTRICAL CHARACTERISTICS - 2N5667 (TA = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)EBO ICER ICES ICBO VCE(sat) VBE(sat) Emitter – Base Breakdown Voltage Collector – Emitter Cut-off Current Collector – Emitter Cut-off Current Collector – Base Cut-off Current Collector – Emitter Saturation Voltage* Base – Emitter On Voltage* Test Conditions IE = 10µA VCE = 400V VCE = 300V VCB = 300V VCB = 400V IC = 3.0A IC = 5.0A IC = 3.0A IC = 5.0A IC = 0.5A IC = 1.0A IC = 3.0A IC = 5.0A VCB = 10V f = 10MHz IC = 0.5A IB1 = 30mA IC = 1.0A IC = 1.0A VCC = 100V VCC = 30V IB1 = -IB2 = 50mA VCE = 5V IB = 0.6A IB = 1.0A IB = 0.6A IB = 1.0A VCE = 2V VCE = 5V VCE = 5V VCE = 5V IE = 0A RB = 100Ω IB = 0 Min. 300 6.0 Typ. Max. Unit V 100 0.2 0.1 1.0 0.4 1.0 1.2 1.5 V µA mA Collector – Emitter Breakdown Voltage IC = 1mA 25 25 10 5 120 2.0 7.0 0.25 µs 2.0 pF — 75 — hFE DC Current Gain* Cobo [hfe] ton toff Output Capacitance Small Signal Current Gain Turn on time Turn off time 100kHz < f > 1MHz NOTES * Pulse Test: tp = 300µs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5382 Issue 3
2N5667
物料型号: - 2N5666 - 2N5667

器件简介: - 2N5666和2N5667是NPN双极型功率开关晶体管。

引脚分配: - TO-39(TO-205AD)封装的引脚视图,1脚为发射极(Emitter),2脚为基极(Base),3脚为集电极(Collector)。

参数特性: - 绝对最大额定值(T=25°C除非另有说明): - 2N5666的集电极-基极电压(VCBO)为250V,集电极-发射极电压(VCEO)为200V,功率耗散在TC=25°C时为26W,在TA=25°C时为1.2W,结到壳的热阻(ReJC)为6.73°C/W,结到环境的热阻(RJA)为145.8°C/W,工作和存储结温范围(TJ,TSTG)为-65到+200°C。 - 2N5667的集电极-基极电压(VCBO)为400V,集电极-发射极电压(VCEO)为300V。

功能详解: - 2N5666和2N5667具有快速开关、CECC筛选选项、太空质量等级选项和JAN等级筛选选项等特点,适用于高速开关电路和功率放大器。

应用信息: - 适用于高速开关电路和功率放大器。

封装信息: - 提供了TO-39(TO-205AD)封装的机械尺寸数据。
2N5667 价格&库存

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