2N5679_02

2N5679 2N5680 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) PNP SILICON TRANSISTORS 6.10 (0.240) 6.60 (0.260) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. The 2N5679 and 2N5680 are silicon epitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The complementary NPN types are the 2N5681 and 2N5682 respectively 3 45° TO-39 (TO-205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Operating and Storage Temperature Range Junction temperature 2N5679 -100V -100V -4V -1A -0.5A 10W 1W 2N5680 -120V -120V –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3076 Issue 1 2N5679 2N5680 THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO Collector Cut Off Current Test Conditions IE = 0 for 2N5679 for 2N5680 VBE = 1.5 for 2N5679 for 2N5680 VCE = -100V VCE = -120V VCB = -100V VCB = -120V Min. Typ. Max. -1 -1 -1 -1 -1 -1 -10 -10 -1 Unit µA ICEV Collector Cut Off Current µA Tcase = 150°C for 2N5679 VCE = -100V for 2n5680 IB = 0 ICEO IEBO Collector Cut Off Current Emitter Cut Off Current for 2N5679 for 2N5680 IC = 0 IB = 0 VCEO(sus)* Collector Emitter Sustaining Voltage for 2N5679 for 2N5680 IC = -250mA VCE(sat)* VBE* hFE* fT CCBO hfe Collector Emitter Saturation Voltage Base Emitter Voltage DC Current Gain Transistion Frequency Collector Base Capacitance Small Signal Current Gain IC = -500mA IC = -1A IC = -250mA IC = -250mA IC = -1A IC = -100mA f = 10MHz IE = 0 f = 1MHz IC = -0.2A f = 1KHz VCE = -1.5V 40 VCB = -20V IB = -25mA IB = -50mA IB = -200mA VCE = -2V VCE = -2V VCE = -2V VCE = -10V 40 5 30 VCE = -70V VCE = -80V VEB = -4V IC = -10mA -100 -120 VCE = -120V mA µA -0.6 -1 -2 -1 150 V MHz 50 pF * Pulse test tp = 300µs , δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3076 Issue 1