2N5781_06

2N5781 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SILICON EPITAXIAL PNP TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. General-Purpose types for Switching and Linear-Amplifier Applications FEATURES 5.08 (0.200) typ. • Low saturation voltages • Maximum Safe area of operation curves 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) • High gain at high current • High breakdown voltages The 2N5781 is intended for medium-power switching and complementary-symmetry audio amplifier applications. 3 45° TO39 (TO205AD) Package PIN 1 – Emitter PIN 2 – Base PIN 3 – Case ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER(BR) VCEO(BR) VEBO IC IB PT TJ , TSTG Collector – Base Voltage Collector – Emitter Breakdown Voltage RBE = 100Ω Collector – Emitter Breakdown Voltage Emitter – Base Voltage Continuous Collector Current Continuous Base Current Total Device Dissipation At Case Temperatures up to = 25°C At Ambient Temperatures up to = 25°C Operating Junction and Storage Temperature Range -80V -80V -65V -5V -3.5A -1A 10W 1W –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6659 Issue 1 2N5781 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter ICER ICEX ICEO IEBO hFE* VCEO(BR)* VCER(BR)* VBE VCE(sat) fT hfe tON tOFF RθJC RθJA Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector – Emitter Breakdown Voltage Collector – Emitter Breakdown Voltage Base – Emitter Voltage Collector – Emitter Saturation Voltage Transition Frequency Small Signal Common – Emitter Current Gain Saturated Switching Time Turn-off Time Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient Test Conditions VCE = -65V RBE = 100Ω VCE = - 75V RBE = 100Ω VCE = -50V VBE = - 5V VCE = -2V VCE = -2V IC =- 10mA IC = -10mA VCE = -2V IC = -1.0A VCE = - 2V f = 4MHz VCE = -2V f = 1.0kHz VCC= -30V IC = -1.0A IB1 = IB2 IB = - 0.1A IC = -0.1mA TC = 150°C VBE = -1.5V TC = 150°C IB = 0 IC = 0 IC = -1.0A IC = -3.2A IB = 0 RBE = 100Ω IC = -1.0A IB = - 0.1A IC = - 0.1A 8 25 0.5 2.5 17.5 175 20 4 - 65 - 80 - 1.5 - 0.5 60 Min. Typ. Max. - 10 - 1.0 - 10 - 1.0 - 100 - 10 100 Unit μA mA μA mA μA μA — V V MHz — μs °C/W NOTES 1. * Pulse Test: tp = 300μs, δ = 1.8%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6659 Issue 1