2N5784

2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL NPN TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100Ω Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ≥ 1/32” (0.8mm) from seating plane for 10 s max. 80V 80V 65V 5V 3.5A 1A 10W 0.057W/°C 1W 0.0057W/°C –65 to +200°C 230°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3078 Issue 1 2N5784 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter ICER ICEX ICEO IEBO hFE* Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Conditions VCE = 65V RBE = 100Ω VCE = 75V RBE = 100Ω VCE = 50V VBE = -5V VCE = 2V VCE = 2V 1 Min. TC = 150°C VBE = -1.5V TC = 150°C IB = 0 IC = 0 IC = 1A IC = 3.2A IB = 0 RBE = 100Ω IC = 1A IB = 100mA IC = 100mA IC = 100mA IC = 1A 5 25 20 4 65 80 Typ. Max. 10 1 10 1 100 10 100 Unit µA mA µA mA µA µA — V VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA VCER(sus)* Collector – Emitter Sustaining Voltage VBE VCE(sat) hfe IC = 100mA VCE = 2V IC = 1A VCE = -2V f = 200kHz VCE = 2V f = 1kHz VCE = 30V Base – Emitter Voltage Collector – Emitter Saturation Voltage Small Signal Common – Emitter Current Gain Small Signal Common – Emitter Current Gain Turn-on Time Turn-off Time Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient 2 1.5 0.5 20 V — — hfe tON tOFF RθJC RθJA 5 15 17.5 17.5 IB1 = IB2 = 100mA µs °C/W NOTES * 1) 2) 3) Pulse Test: tp = 300µs, δ = 1.8%. These tests MUST NOT be measured on a curve tracer. Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where hfe is decreasing at approximately 6dB per octave. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3078 Issue 1