2N5885

2N5885 MECHANICAL DATA Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) NPN MULTI - EPITAXIAL POWER TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 22.23 (0.875) max. FEATURES • HIGH VOLTAGE • LOW SATURATION VOLTAGES • HIGH RELIABILITY 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS TO–3(TO204AA) PIN 1 — Base . PIN 2 — Emitter Case is Collector • POWER SWITCHING CIRCUITS • LINEAR APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB Ptot Tstg, Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Total Power Dissipation at Tcase ≤ 25°C Storage Temperature Junction Temperature 60V 60V 5V 25A 50A 7.5A 200W –65 to 200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6366 Issue 1 2N5885 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(BR)* VBE* ICEV IEBO ICEO ICBO VCE(sat)* VBE(sat)* hFE* Collector - Emitter Breakdown Voltage Base – Emitter Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Small Signal Current Gain Collector Base Capacitance Transition Frequency Rise Time Storage Time Fall Time Test Conditions IC = 200mA IC = 10A VCE = 60V VEB = 5V VCE = 30V VCE = 60V IC = 15A IC = 25A IC = 25A IC = 3A IC = 10A IC = 25A IC = 3A IE = 0 VCE = 4V VCE = 4V VBE = –1.5V TCASE =150°C IC = 0 IB = 0 IE = 0 IB = 1.5A IB = 6.25A IB = 6.25A VCE = 4V VCE = 4V VCE = 4V f = 1 KHz VCB = 10V f = 1 MHz Min. 60 Typ. Max. Unit V 1.5 1.0 10 1.0 2 1.0 1.0 4 2.5 V mA mA mA mA V V 35 20 4 20 500 4 0.7 1.0 0.8 µs — pF MHz 100 — hfe Ccbo fT tr ts tf IC = 1.0A VCB = 10V f = 1 MHz VCC = 30V IB1 = - IB2 = 1.0A IC = 10A THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case Max 0.875 °C/W * Pulse test tp = 300µs , δ = 1.5 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6366 Issue 1