2N6190

2N6190 MECHANICAL DATA Dimensions in mm(Inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) PNP SILICON TRANSISTORS FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • HERMETICALLY SEALED TO-39 PACKAGE • CECC LEVEL SCREENING OPTIONS 5.08 (0.200) typ. • JAN LEVEL SCREENING OPTIONS 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 APPLICATIONS: Hermetically sealed, the 2N6190 silicon planar epitaxial PNP transistor is intended for general purpose applications. 45° TO39 PACKAGE(TO205AD) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Dissipation at TC ≤ 25°C derate above 25°C Storage Temperature Range Junction temperature 80V 80V 6V 5A 1A 10W 17.5°C/W –55 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5912 Issue: 1 2N6190 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO* Collector Emitter Breakdown Voltage ICBO ICEX ICEO IEBO VCE(sat)* VBE(sat)* Collector-Base Cut Off Current Collector-Emitter Cut Off Current Collector-Emitter Cut Off Current Collector-Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Voltage Test Conditions IC = 50mA IE = 0 VBE = 1.5V IB = 0 VBE = 6V IC = 2A IC = 5A IC = 2A IC = 5A IC = 0.5A IC = 2A IC = 5A VCE = 10V f = 10MHz VBE = 2V f =100kHz VCB = 10V f =100kHz VCC = 40V VCC = 40V IE = 2.0A IE = 2.0A VBE(off) = 3.0 IB1 = 0.2A IB1 = IB2 = 0.2A IE = 0 IC = 0 IB = 0.2A IB = 0.5A IB = 0.2A IB = 0.5A VCE = 2V VCE = 2V VCE = 2V IC = 0.5A VCB = 80V VCE = 75V TA = 150°C VCE = 75V Min. 80 Typ. Max. 10 10 1.0 100 100 0.7 1.2 1.2 1.8 Unit V µA µA mA µA µA V V 30 30 20 30 1250 pF 300 100 100 20 200 ns µs ns MHz 120 — hFE* DC Current Gain fT Transition Frequency Input Capacitance, Output Open Circuited Open Circuit Output Capacitance Delay Time Rise Time Storage Time Fall Time CIBO COBO td tr ts tf * Pulse Test: tp = 300µs , δ = 1%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5912 Issue: 1