2N6193LCC4

2N6193LCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 FEATURES • Hermetically sealed ceramic surface mount package • Small footprint • Simple drive requirements 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. LCC4 CERAMIC SURFACE MOUNT PACKAGE Underside View Pads 6, 7, 8, 9, 10, 11, 12, 13. Pads 4,5 Pads 1,2,15,16,17,18 Pads 3,14 Emitter Base Collector Not Connected ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC IB Ptot Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Dissipation at Tamb ≤ 25°C derate above 25°C Total Dissipation at Tamb ≤ 25°C derate above 25°C Storage Temperature Range Junction temperature 100V 100V 6V 5A 1A 1W 5.71mW/°C 10W 57.1mW/°C –55 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2946 Issue: 3 2N6193LCC4 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO ICBO ICEX ICEO IEBO VCE(sat) VBE(sat) Collector Emitter Breakdown Voltage Collector-Base Cut Off Current Collector-Emitter Cut Off Current Collector-Emitter Cut Off Current Collector-Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Voltage Test Conditions IC = 50mA pulsed IE = 0 VBE = 1.5V IB = 0 VEB = 6V IC = 2A IC = 5A IC = 2A IC = 5A IC = 0.5A IC = 2A IC = 5A VCB = 100V VCE = 90V TA = 150°C VCE = 100V IC = 0 IB = 0.2A IB = 0.5A IB = 0.2A IB = 0.5A VCE = 2V VCE = 2V TC = -55°C VCE = 2V IC = 0.5A Min. 100 Typ. Max. 10 10 1 100 100 0.7 1.2 1.2 1.8 Unit V µA µA mA µA µA V 60 60 12 30 3.0 15 240 — hFE DC Current Gain Magnitude of Common Emitter Small |hfe| Signal Short circuit forward Current Transfer ratio. CIBO COBO Input Capacitance, Output Open Circuited Open Circuit Output Capacitance VCB = 5V f = 10MHz VCB = 10V IE = 0 100kHz