2N6277_09

SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • • • • • • • High VCEO. High DC Current Gain, hFE. Low Collector-Emitter Saturation Voltage, VCE(sat). Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 180V 150V 6V 50A 100A 20A 250W 1.43W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 0.7 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8537 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO ICEO ICEX IEBO ICBO (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current Test Conditions IC = 10mA VCE = 75V VCE = 180V IB = 0 VBE = -1.5V TA = 150°C VEB = 6V VCB = 180V IC = 1.0A IC = 0 IE = 0 VCE = 4V VCE = 4V TA = -55°C IC = 50A VCE = 4V IB = 2A IB = 10A IB = 2A IB = 10A VCE = 4V Min. 150 Typ Max. Units V 50 10 1.0 100 10 50 30 10 10 1.0 3.0 1.8 3.5 1.8 120 µA mA µA hFE (1) Forward-current transfer ratio IC = 20A VCE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 20A IC = 50A IC = 20A IC = 50A IC = 20A VBE(sat) VBE(on) (1) V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Output Capacitance IC = 1.0A f = 10MHz VCB = 10V f = 1.0MHz IC = 20A IB1 = 2A IC = 20A IB1 = - IB2 = 2A VCC = 80V VCC = 80V IE = 0 600 pF VCE = 10V 2 12 Cobo ton toff Turn-On Time 0.5 µs 1.6 Turn-Off Time Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8537 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m ax. 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 )  2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 6 .6 7 (1 .0 5 0 ) m ax. 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . Website: http://www.semelab-tt.com Document Number 8537 Issue 1 Page 3 of 3