2N6300

2N6300

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N6300 - DARLINGTON SILICON POWER TRANSISTORS - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6300 数据手册
2N6300 2N6301 MECHANICAL DATA Dimensions in mm (inches) DARLINGTON SILICON POWER TRANSISTORS 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034) Designed for general purpose amplifier and low frequency switching applications. FEATURES • High DC Current Gain 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) • Monolithic Construction with Built-in Base–Emitter Shunt Resistors TO–66 (TO-213AA) Pin 1 –Base Pin 2 –Emitter Case – Collector ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300 VCEO VCBO VEBO IC IB PD TSTG , TJ TθJC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current 60V 60V Continuous Peak 5V 8A 16A 120mA 2N6301 80V 80V Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance – Junction - Case 100W 75W 0.571W/°C 0.428W/°C –65 to +200°C 1.75°C/W 2.33°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3979 Issue 1 2N6300 2N6301 ELECTRICAL CHARACTERISTICS 2N6300 Parameter OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IEBO Collector – Emitter Sustaining Voltage 1 Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS 1 hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter On Voltage DYNAMIC CHARACTERISTICS Cob Output Capacitance Magnitude of Common Emitter hfe Small Signal Short Circuit Current Transfer Ratio hfe Small Signal Current Gain VCB = 10V f = 0.1MHz VCE = 3V IC = 3A f = 1MHz VCE = 3V f = 1kHz VCE = 3V VCE = 3V IC = 4A IC = 8A IC = 8A VCE = 3V IC = 100mA VCE = 30V (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit IB = 0 IB = 0 TC = 150°C 60 0.5 0.5 5.0 2.0 750 100 2.0 3.0 4.0 2.8 18000 V mA mA mA VCE = Rated VCB VBE(off) = 1.5V VBE = 5V IC = 0 IC = 4A IC = 8A IB = 16mA IB = 80mA IB = 80mA IC = 4A IE = 0 — V V V 200 pF 4.0 IC = 3A — 300 — Notes 1 Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3979 Issue 1 2N6300 2N6301 ELECTRICAL CHARACTERISTICS 2N6301 Parameter OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IEBO Collector – Emitter Sustaining Voltage 1 Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS 1 hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Base – Emitter On Voltage DYNAMIC CHARACTERISTICS Cob Output Capacitance Magnitude of Common Emitter hfe Small Signal Short Circuit Current Transfer Ratio hfe Small Signal Current Gain VCB = 10V f = 0.1MHz VCE = 3V IC = 3A f = 1MHz VCE = 3V f = 1kHz VCE = 3V VCE = 3V IC = 4A IC = 8A IC = 8A VCE = 3V IC = 100mA VCE = 40V (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit IB = 0 IB = 0 TC = 150°C 80 0.5 0.5 5.0 2 750 100 2.0 3.0 4.0 2.8 18000 V mA mA mA VCE = Rated VCB VBE(off) = 1.5V VBE = 5V IC = 0 IC = 4A IC = 8A IB = 16mA IB = 80mA IB = 80mA IC = 4A IE = 0 — V V V 200 pF 4.0 IC = 3A — 300 — Notes 1 Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3979 Issue 1
2N6300
### 物料型号 - 型号:2N6300、2N6301

### 器件简介 - 应用:这些晶体管被设计用于一般用途的放大器和低频开关应用。

### 引脚分配 - TO–66 (TO-213AA) 封装: - Pin 1 – 基极(Base) - Pin 2 – 发射极(Emitter) - Case – 集电极(Collector)

### 参数特性 - 绝对最大额定值(Tc = 25°C unless otherwise stated): - VCEO:集电极-发射极电压;2N6300为60V,2N6301为80V。 - VCBO:集电极-基极电压;2N6300为60V,2N6301为80V。 - VEBO:发射极-基极电压;2N6300为5V,2N6301无此参数。 - Ic:集电极电流;连续8A,峰值16A。 - IB:基极电流;120mA。 - PD:总耗散功率@Tc = 25°C;2N6300为100W,2N6301为75W。 - TSTG,TJ:工作和存储结温度范围;-65 to +200°C。 - TeJC:热阻-结到壳体;2N6300为1.75°C/W,2N6301为2.33°C/W。

### 功能详解 - 特点: - 高直流电流增益。 - 单片结构,内置基极-发射极并联电阻。

### 应用信息 - 这些晶体管适用于需要高电流增益和大功率处理的应用,如放大器和开关。

### 封装信息 - 封装类型:TO–66 (TO-213AA)。
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