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2N6301SMD05

2N6301SMD05

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    2N6301SMD05 - COMPLEMENTARY SILICON POWER TRANSISTORS - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6301SMD05 数据手册
2N6299SMD 2N6301SMD MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. 2N6299SMD05 2N6301SMD05 COMPLEMENTARY SILICON POWER TRANSISTORS 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 2 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 (TO-276AB) Pad 1 – Base Pad 2 – Collector 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) Pad 3 – Emitter Designed for general purpose amplifier and low frequency switching applications. m in . 2 .4 1 (0 .0 9 5 ) 2 .4 1 (0 .0 9 5 ) 0 .1 2 7 (0 .0 0 5 ) 3 .1 7 5 (0 .1 2 5 ) M ax. 3 .0 5 (0 .1 2 0 )  ! FEATURES • High DC Current Gain 1 0 .1 6 (0 .4 0 0 ) 0 .7 6 (0 .0 3 0 ) m in . 5 .7 2 (.2 2 5 ) • Monolithic Construction with Built-in Base–Emitter Shunt Resistors 0 .1 2 7 (0 .0 0 5 ) 16 PLC S 0 .5 0 (0 .0 2 0 ) 7 .2 6 (0 .2 8 6 ) 0 .1 2 7 (0 .0 0 5 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD05 (TO-276AA) Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PD TSTG , TJ Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 80V 80V 5V 8A 16A 120mA 75W 0.428W/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2660 Issue 2 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS VCEO(sus) ICEO ICEX IEBO Collector – Emitter Sustaining Voltage * Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current ON CHARACTERISTICS hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain* Collector – Emitter Saturation Voltage* Base – Emitter On Voltage* DYNAMIC CHARACTERISTICS Cob Output Capacitance Magnitude of Common Emitter hfe Small Signal Short Circuit Current Transfer Ratio hfe Small Signal Current Gain* VCB = 10V f = 0.1MHz VCE = 3V IC = 3A f = 1MHz VCE = 3V f = 1kHz IC = 3A 300 — 25 350 — IE = 0 200 pF VCE = 3V VCE = 3V IC = 4A IC = 8A VCE = 3V IC = 4A IC = 8A IB = 16mA IB = 80mA IB = 80mA IC = 4A 750 100 2.0 3.0 4.0 2.8 18000 — V V V IC = 100mA VCE = 40V IB = 0 IB = 0 TC = 150°C VBE = 5V IC = 0 80 0.5 0.5 5.0 2 V mA mA mA Test Conditions Min. Typ. Max. Unit VCE = Rated VCB VBE(off) = 1.5V Base – Emitter Saturation Voltage* IC = 8A Notes * Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2660 Issue 2
2N6301SMD05
1. 物料型号: - 2N6299SMD和2N6301SMD是互补的硅功率晶体管,其中2N6299SMD是PNP型晶体管,2N6301SMD是NPN型晶体管。

2. 器件简介: - 这些晶体管设计用于通用放大器和低频开关应用。

3. 引脚分配: - 对于SMD1(TO-276AB)封装: - Pad1 - Base(基极) - Pad2 - Collector(集电极) - Pad3 - Emitter(发射极) - 对于SMD05(TO-276AA)封装: - Pad1 - Base(基极) - Pad2 - Collector(集电极) - Pad3 - Emitter(发射极)

4. 参数特性: - 最大额定值: - VCEO(集电极-发射极电压):80V - VCBO(集电极-基极电压):80V - VEBO(发射极-基极电压):5V - Ic(连续集电极电流):8A(峰值16A) - IB(基极电流):120mA - PD(总耗散功率@Tc=25°C):75W - 功率耗散在25°C以上时的降额因子:0.428W/°C - TSTG,TJ(工作和存储结温范围):-65至+200°C

5. 功能详解: - 这些晶体管具有高直流电流增益和内置的基极-发射极并联电阻的单片结构。

6. 应用信息: - 适用于通用放大器和低频开关应用。

7. 封装信息: - 提供了两种封装类型:SMD1(TO-276AB)和SMD05(TO-276AA)。
2N6301SMD05 价格&库存

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