2N6385SMD05

2N6385SMD05 MECHANICAL DATA Dimensions in mm (inches) SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. FEATURES • High Gain Darlington Performance 3.05 (0.120) 1 3 10.16 (0.400) 0.76 (0.030) min. 5.72 (.225) 2 APPLICATIONS • Audio Amplifiers • Hammer Drivers • Shunt and Series Regulators 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) 0.50 (0.020) max. SMD05 (TO-276AA) Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCEO VCEX VCBO VEBO IC ICM IB Ptot TSTG , TJ Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current - Continuous Total Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range(2) 80V 80V 80V 5V 10A 15A 0.25A 100W 0.571W/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6387 Issue 1 2N6385SMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS VCEO(BR)* ICEO ICEV IEBO VCER(BR) VCEV(BR) Collector – Emitter Breakdown Voltage Collector Cut–off Current Collector Cut–off Current Emitter Cut–off Current Collector–Emitter Breakdown Voltage* Collector–Emitter Breakdown Voltage* ON CHARACTERISTICS DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter On Voltage Diode Forward Voltage DYNAMIC CHARACTERISTICS Output Capacitance *Magnitude of Common Emitter Small Signal Short-Circuit Common Emitter Small Signal Short-Circuit Forward SECOND BREAKDOWN Es/b Energy with Base-Reverse Biased L =12mH VBE(off) = 1.5V RBE = 100Ω IC = 4.5A 120 mJ VCE = 5V IC = 200mA VCE = 80V IB = 0 IB = 0 TC = 150°C VEB = 5V REB =100Ω VBE(off) = 1.5V IC = 0 IC = 200mA IC = 200mA 80 1.0 0.3 3.0 10 80 V 80 V mA mA mA Test Conditions Min. Typ. Max. Unit VCE = VCEO(BR) VBE(off) = 1.5V hFE VCE(sat) VBE(on) VF VCE = 3V VCE = 3V IC = 5A IC = 10A VCE = 3V VCE = 3V IF = 10A VCB =10V VCE = 5V IC = 5A IC = 10A IB = 0.01A IB = 0.1A IC = 5A IC = 10A 1000 100 20000 2.0 3.0 2.8 4.5 4.0 — V V V Cob lhfel hfe IE = 0 ftest= 1.0MHz IC = 1.0A f = 1.0KHz IC = 1.0A f = 1.0KHz 20 1000 200 pF — — * Pulse test tp = 300μs , Duty Cycle ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6387 Issue 1