2N6436 2N6437 2N6438
MECHANICAL DATA Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
HIGH POWER PNP SILICON TRANSISTORS
0.97 (0.060) 1.10 (0.043)
1
2
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
DESCRIPTION Designed for use in Industrial - Military Power Amplifier and Switching Circuit Applications
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.15 (0.675)
TO-3 Package (TO-204AA)
Pin 1 – Base Pin 2 – Emitter Case – Collector
22.23 (0.875) max.
ABSOLUTE MAXIMUM RATINGS(TCASE = 25°c unless otherwise stated) VCB Collector – Base Voltage VCEO VEB IC IB PD Tstg,Tj Collector – Emitter Voltage Emitter – Base Voltage Collector Current Continuous Peak Base Current Total Device Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Temperature Range
2N6436 100 80
2N6437 120 100 6.0V 25A 50A 10A 140W 0.8W/°C
2N6438 140 120
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3252 Issue 3
2N6436 2N6437 2N6438
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W
ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated)
Parameter
ICBO IEBO Collector Cut Off Current Emitter Cut Off Current
Test Conditions
VCB = 100V IE = 0 VCB = 120V IE = 0 VCB = 140V IE = 0 VEB = 6V VCE = 90V VCE = 110V VCE = 130V VCE = 40V IB = 0 IC = 0
2N6436 2N6436 2N6437 2N6438
Min.
Typ.
Max. Unit
10 10 10 100 10 1.0 10 1.0 10 1.0 50 50 50 µA µA µA mA µA mA µA mA µA
VBE (off) =-1.5V TC = 150°C ICEX Collector Cut Off Current
2N6437
VBE (off) =-1.5V TC = 150°C
2N6436
VBE (off) =-1.5V TC = 150°C
2N6436 2N6437 2N6438 2N6436
ICEO
Collector Cut off Current
VCE = 50V IB = 0 VCE = 60V IB = 0.
80 100 120 30 20 12 1.0 1.8 1.8 2.5 40 700 0.3 1.0 0.25 μs MHz pF V 120 — V
V(BR)CEO*
Collector Emitter Breakdown Voltage
IC = 50mA VCE =2.0V
IB = 0 2N6437
2N6438
IC = 0.5A IC = 10A IC = 25A IB = 1.0A IB = 2.5A IB = 1.0AV IB = 2.5A VCE = 10V ftest = 10MHz VCE = 10V f = 100kHz IC = 10A IC = 10A
hFE*
DC Current Gain
VCE = 2.0V VCE = 2.0V IC = 10A IC = 25A IC = 10A IC = 25A IC = 1.0A IE = 0A VCC = 80V VCC = 80V
VCE(sat)* VBE(sat)* fT Cob tr ts tf
Collector - Emitter Saturation Voltage Base Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Rise Time Storage Fall Time
VBE(off) = 6.0V IB1 = 1.0A VBE(off) = 6.0V IB1 = IB2 =1.0A
* Pulse test: Pulse Width ≤ 300μs , Duty Cycle ≤ 2.0%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3252 Issue 3
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