2N6660CSM4

2N6660CSM4 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 0.23 min. (0.009) FEATURES 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) • Switching Regulators • Converters • Motor Drivers • JAN Level Screening Options • CECC Screening Options • Space Quality Level Options Underside View LCC3 PACKAGE (MO-041BA) Pin 1 – Drain Pin 2 – N/C Pin 3 – Source Pin 4 – Gate ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS VGS ID ID IDM PD PD Tj Tstg TL Drain – Source Voltage Gate – Source Voltage Drain Current Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature ( 1” 16 from 60V ±40V @ TCASE = 25°C @ TCASE = 100°C @ TCASE = 25°C @ TCASE = 100°C 1.1A 0.8A 3A 6.25W 2.5W –55 to 150°C –55 to 150°C case for 10 sec.) 300°C Operating Junction Temperature Range * Pulse Width Limited by Maximum Junction Temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7777 Issue 1 2N6660CSM4 ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter STATIC CHARACTERISTICS V(BR)DSS Drain – Source Breakdown Voltage VGS(th) IGSS Gate Threshold Voltage Gate – Body Leakage Current VGS = 0V VDS = VGS VGS = ±15V VDS = 0V VDS = 60V IDSS ID(on)* Zero Gate Voltage Drain Current On–State Drain Current VDS = 48V VDS =>2V VGS = 5V RDS(on)* Drain – Source On Resistance VDS(on)* Drain – Source On Voltage DYNAMIC CHARACTERISTICS gFS* Ciss Coss Crss tON tOFF IS ISM VSD Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn–On Time Turn–Off Time Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage 1 VDS = 25V VDS = 25V VGS = 0V f = 1MHz VDD = 25V RL = 23Ω ID = 1.0A RG= 25Ω , Test Conditions ID = 10μA ID = 1.0mA TCASE = 125°C VGS = 0V VGS = 0V TCASE = 125°C VGS = 10V ID = 0.3A TCASE = 125°C ID = 0.3A ID = 1A ID = 0.5A Min. 60 0.8 Typ. 100 1.5 Max. Unit V nA 2 ±100 ±500 10 500 μA A 1.5 1.7 4.7 2.7 3.9 1.4 2.7 5 3 4.2 1.5 3 VGS = 10V ID = 1.0A VGS = 5V VGS = 10V Ω V 170 195 35 33 2 8 8 50 40 10 10 10 -1.1 ms pF ns BODY-DRAIN DIODE CHARACTERISTICS Modified MOSPOWER Symbol Showing The Integral PN Juncion Rectifier VGS = 0V IS = -1.1A / 5 A -3 -0.9 V TCASE = 125°C * Pulse Test: tp ≤ 80 μs , δ ≤ 1% Parameter RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Min. Typ. Max. 210 20 Unit °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7777 Issue 1