2N6660CSM4_0809

2N6660CSM4 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 4 1 0.23 min. (0.009) N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.0A RDS(on) 3.0Ω • • • • Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain 3.81 ± 0.13 (0.15 ± 0.005) 1.27 ± 0.05 (0.05 ± 0.002) 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) FEATURES LCC3 PACKAGE (MO-041BA) (Underside View) PAD 1 – DRAIN PAD 3 – SOURCE PAD 2 – N/C PAD 4 – GATE DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Hi-Reliability Military and Space screening options available CASE ABSOLUTE MAXIMUM RATINGS T VDS ID IDM VGS Ptot(1) Ptot(2) Tj,Tstg Drain - Source Voltage Drain Current Drain Current = 25°C unless otherwise stated 60V 1.0A 3A ±20V 3.0W 0.020W/°C 0.5W -55 to +175°C - Continuous (TC = 25°C) - Pulsed (Note 1) Gate - Source Voltage Total Power Dissipation at T mounting base ≤ 25°C De-rate Linearly above 25°C Total Power Dissipation at Tambient ≤ 25°C Operating and Storage Junction Temperature Range THERMAL DATA Rthj-mb NOTES: Thermal Resistance Junction – Mounting base Max 50 °C/W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 300µS, Duty Cycle , δ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7777, ISSUE 2 2N6660CSM4 STATIC ELECTRICAL RATINGS (T Parameter V(BR)DSS VGS(th) Drain – Source Breakdown Voltage case =25°C unless otherwise stated) Test Conditions VGS = 0V VDS = VGS ID = 10µA ID = 1.0mA TC = 125°C TC = -55°C VGS = ±20V VDS = 48V VDS = 10V VGS = 5V VGS = 10V VDS = 25V VGS = 0V VGS = 0V VDS = 0V TC = 125°C VGS = 0V TC = 125°C VGS = 10V ID = 0.3A ID = 1.0A TC = 125°C ID = 0.5A Is = 1.0A Is = 1.0A Min. Typ. 60 0.8 0.3 1.5 170 0.7 350 Max. 2 2.5 ±100 ±500 1.0 100 5 3 5.6 1.6 - Unit V Gate – Source threshold Voltage IGSS IDSS ID(on) RDS(on) gFS VSD trr Gate – Source Leakage Current nA µA A Ω ms V ns Zero Gate Voltage Drain Current On – State Drain Current (Note 2) Drain – Source On Resistance (Note 2) Forward Transconductance (Note 2) Diode Forward Voltage (Note 2) Body Diode Reverse Recovery DYNAMIC CHARACTERISTICS Ciss Coss Crss Td(on) Td(off) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Turn-Off Delay Time VDD = 25V RGS = 50Ω ID = 1.0A (Note 3) VDS = 25V f = 1.0MHz VGS = 0V - - 50 40 10 10 10 ns pF Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7777, ISSUE 2