2N6661DCSM
MECHANICAL DATA
Dimensions in mm (inches)
2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006)
2.54 ± 0.13 (0.10 ± 0.005)
2 1
A
3 4 5
6
0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005)
DUAL N–CHANNEL ENHANCEMENT MODE MOSFET VDSS 90V ID 0.9A RDS(on) 4.0
FEATURES
• • • • Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain
0.64 ± 0.06 (0.025 ± 0.003)
6.22 ± 0.13 (0.245 ± 0.005)
CERAMIC LCC2 PACKAGE
(Underside View) PAD 1 – DRAIN 1 PAD 4 – DRAIN 2 PAD 2 – GATE 1 PAD 5 – SOURCE 2 PAD 3 – GATE 2 PAD 6 – SOURCE 1
4.32 ± 0.13 (0.170 ± 0.005)
DESCRIPTION
These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are available.
ABSOLUTE MAXIMUM RATINGS Each Side - TCASE = 25°C unless otherwise stated
VDS ID IDM VGS Ptot(1) Ptot(2) Tj,Tstg Drain - Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100° C) - Pulsed (Note 1) Gate - Source Voltage Total Power Dissipation at Tmb ≤ 25° C De-rate Linearly above 25°C Total Power Dissipation at Tamb ≤ 25° C Operating and Storage Junction Temperature Range 90V 0.9A 0.7A 3A ±20V 6.25W 0.050W/° C 0.5W -55 to +150° C
THERMAL DATA
Rthj-mb Rthj-amb NOTES: Thermal Resistance Junction – Mounting base Thermal Resistance Junction - Ambient Max Max 20 250 ° C/W ° C/W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25° L = 1.46mH, I AS = 48A, VDD = 50V, RG = 25 , C, 3) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle , δ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk W ebsite: http://www.semelab.co.uk
DOC 8874, ISSUE 1
2N6661DCSM
STATIC ELECTRICAL RATINGS (Each Side - Tcase=25°C unless otherwise stated)
Parameter
V(BR)DSS VGS(th) Drain – Source Breakdown Voltage
Test Conditions
VGS = 0V VDS = VGS ID = 1.0µA ID = 1.0mA TC = 125°C TC = -55° C
Min. Typ.
90 0.8 0.3 1.5 170 0.7 -
Max.
2 2.5 ±100 ±500 1.0 100 5.3 4 7.5 1.6 4 7.5 1.4
Unit
V
Gate – Source threshold Voltage
IGSS IDSS ID(on) RDS(on)
Gate – Source Leakage Current
VGS = ±20V VDS = 72V
VDS = 0V TC = 125°C VGS = 0V TC = 125°C
nA µA A
Zero Gate Voltage Drain Current On – State Drain Current (note 3) Drain – Source On Resistance (note 3)
VDS = 15V VGS = 5V VGS = 10V VGS = 5V
VGS = 10V ID = 0.3A ID = 1.0A TC = 125°C ID = 0.3A ID = 1.0A TC = 125°C
VDS(on)
Drain – Source On Voltage (note 3)
VGS = 10V
V
gFS VSD
Forward Transconductance (Note 3) Diode Forward Voltage (Note 3)
VDS = 7.5V VGS = 0V
ID = 0.475A Is = 0.86A
ms V
DYNAMIC CHARACTERISTICS
Ciss Coss Crss Td(on) Td(off) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Turn-Off Delay Time VDD = 25V RGS = 50 ID = 1A
(Note 3)
VDS = 25V f = 1.0MHz VGS = 0V -
50 40 10 10 10
ns pF
MATCHING CHARACTERISTICS FET1 to FET2
VGS(th) M gFSM Gate – Source threshold Voltage Matching Forward Transconductance Matching
(Note 3)
VDS = VGS VDS = 7.5V
ID = 1mA ID = 0.475A
-
-
±25 50
mV ms
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk W ebsite: http://www.semelab.co.uk
DOC 8874, ISSUE 1
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