2N6661_10

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • • • • • • • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD PD TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at Total Power Dissipation at Operating Temperature Range Storage Temperature Range TC = 25°C TC ≤ 25°C De-rate TC > 25°C TA ≤ 25°C De-rate TA > 25°C 90V ±20V 0.9A 3.0A 5W 40mW/°C 725mW 5.8mW/°C -55 to +150°C -65 to +150°C THERMAL PROPERTIES Symbols RθJC RθJA Parameters Thermal Resistance, Junction To Case Thermal Resistance, Junction To Ambient Min. Typ. Max. 25 172 Units °C/W °C/W Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 3092 Issue 5 Page 1 of 3 Website: http://www.semelab-tt.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSS Parameters Drain-Source Breakdown Voltage Test Conditions VGS = 0 VDS = VGS ID = 1.0µA ID = 1.0mA TC = 125°C TC = -55°C Min. 90 0.8 0.3 Typ. Max. Units V 2.0 V 2.5 ±100 ±500 1.0 100 µA A 5.3 4.0 7.5 1.6 4.0 7.5 V Ω nA VGS(th) Gate Threshold Voltage IGSS Gate-Source Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance VGS = ±20V VDS = 0V TC = 125°C IDSS ID(ON)(2) (2) VDS = 72V VGS = 0 TC = 125°C VDS = 10V VGS = 5V VGS = 10V ID = 0.3A ID = 1.0A TC = 125°C 1.5 RDS(on) VGS = 10V VGS = 5V VDS(on) (2) (2) ID = 0.3A ID = 1.0A TC = 125°C Static Drain-Source On-State Voltage Forward Transconductance Body Diode Forward Voltage Body Diode Reverse Recovery VGS = 10V gfs VDS = 7.5V VGS = 0 VGS = 0 ID = 0.475A IS = 0.86A IS = 1.0A 170 0.7 350 1.4 mƱ V ns VSD trr (2) (2) DYNAMIC CHARACTERISTICS Ciss Coss Crss td(on) td(off) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time VGS = 0 VDS = 25V f = 1.0MHz VDD = 25V ID = 1.0A RG = 50Ω 50 40 10 10 ns 10 pF S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 3092 Issue 5 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO39 PACKAGE (TO-205AD) Pin 1 - Source Pin 2 - Gate Pin 3 / Case - Drain S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 3092 Issue 5 Page 3 of 3