2N6686
NPN BIPOLAR MULTI-EPITAXIAL POWER TRANSISTOR
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36)
FEATURES
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.15 (0.675)
1
2
• LOW VCE(SAT) • FAST SWITCHING
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
22.23 (0.875) max.
APPLICATIONS
• SUITABLE FOR POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS.
TO3 (T0-204AA)
Pin 1 – Base Pin 2 – Emitter Case – Collector
ABSOLUTE MAXIMUM RATINGS (When mounted on a suitable header)
VCEX VCEO VEBO IC ICM IB Tstg Tj Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Collector Current (Peak) Base Current Storage Temperature Maximum Operating Junction Temperature (VBE = –1.5V) (IB = 0) 210V 160V 8V 25A 50A 8A –65 to 200°C 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6480 Issue 1
2N6686
ELECTRICAL CHARACTERISTICS (When mounted on a suitable header)
Parameter
VCEO(BR)* ICEV IEBO VCE(sat)* VBE(sat)* hFE Collector – Emitter Breakdown Voltage Collector - Emitter Current Emitter Cut-off Current (IC = 0) Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage DC Current Gain
Test Conditions
IC = 200mA VCE = 260V VBE = –8V IC = 25A IC = 25A IC = 1A IC = 10A IC = 25A IC = 1A f = 5MHz VCE = 18V f = 0.1MHz VCE = 10V VCE = 10V IC = 1A IB = 0 VBE = –1.5V IC = 0 IB = 2.5A IB = 2.5A VCE = 2V VCE = 2V VCE = 2V VCE = 10V
Min.
160
Typ.
Max. Unit
V 50 100 1.5 1.8 µA V V —
30 25 15 4 1 300 20 650 100 20 — s pF MHz 100
hfe IS/B Cob fT
Small Signal Current Gain
Second Breakdown Collector Current IC = 11.1A Output Capacitance Transition Frequency
*Pulse Test : tp = 300µs , δ ≤ 2%.
SWITCHING CHARACTERISTICS (When mounted on a suitable header)
Parameter
SWITCHING TIMES ON RESISTIVE LOAD td tr ts tf Delay time Rise time Storage time Fall time IC = 25A Vclamp = 210V IC = 25A VBE = –4V IB1 = –IB2 = 2.5A 0.1 0.6 1.5 0.25 VBE = –4V L = 25µH 0.5 µS µS
Test Conditions
Min.
Typ.
Max. Unit
TURN OFF SWITCHING CHARACTERISTICS – INDUCTIVE LOAD tc VCE/ IC Crossover Time VCC = 80V Rc ≤ 4Ω IB1 = –IB2 = 3A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6480 Issue 1
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