2N6782

2N6782 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. APPLICATIONS • FAST SWITCHING 5.08 (0.200) typ. • MOTOR CONTROLS • POWER SUPPLIES 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 3 45° TO39 Package (TO-205AF) Pin 1 - Source Underside View Pin 2 - Gate Pin 3 - Drain and Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VDGR ID @Tcase = 25°C ID @Tcase = 100°C IDM VGS PD@ Tcase = 25°C PD@ Tcase = 100°C Junction to Case Junction to ambient TJ,Tstg Lead Temperature Drain Source Voltage Drain Gate Voltage (RGS = 1MΩ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Linear Derating Factor Operating and Storage Temperature Range 1” ( 16 from case for 10 secs) 100V 100V 3.5A 2.25A 14A ±20V 15W 6W 0.12W/°C 0.005W/°C -55 to +150°C 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3093 Issue 1 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF IGSSR IDSS ID(on) VDS(on) RDS(on) Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current On State Drain Current1 Static Drain Source On-State Voltage1 Static Drain Source On-State Resistance1 DYNAMIC CHARACTERISTICS gfs Ciss Coss Crss td(on) tr td(off) tf Forward Transductance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time VDS = 5V VGS = 0 f = 1MHz VDD = 34V RG = 50Ω ID = 2.25A RL = 15Ω IDS = 2.25A VDS = 25V 1.0* 60* 40* 10* 3.0* 200* 100* 25* 15* 25* 25* 20* ns pF VGS = 0 VDS = VGS VDS = 0 VGS = 20V VDS = 0 VGS = -20V VDS = 80V. VDS = 100v VGS = 10V VGS = 10V VGS = 10V ID = 3.5A ID = 2.25A TC = 125°C VGS =0 VGS = 0 TC = 125°C 3.5 2.1* 0.6* 1.08* TA = 125°C ID = 0.25mA ID = 0.5A TA = 125°C 100* 2* 1* 4.0* 4.0* 100* 200* -100* 0.25* 1* 1 A V Ω V S( ) Ω mA nA V V Test Conditions Min. Typ. Max. Unit (MOSFET switching times are essentially independent of operating temperature.) IS ISM VSD trr BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current Body , Diode Source Current1 (Body Diode) Diode Forward Voltage 1 Reverse Recovery Time 3.5* / 5 A A V nS symbol showing the intergal P-N junction rectifier. 14 1.5* 200 IS = 3.5A TJ = 25°C IF =IS di / dt = 100A/µs VGS = 0 TJ = 25°C THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction – Case RθJA Thermal Resistance Junction – Ambient Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% Free Air Operation 8.33* 175 °C\W * JEDEC registered Values Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3093 Issue 1