2N6790

2N6790 IRFF220 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES • REPETITIVE AVALANCHE RATING • SIMPLE DRIVE REQUIREMENTS 5.08 (0.200) typ. • HERMETICALLY SEALED 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 3 APPLICATIONS • FAST SWITCHING 45° • MOTOR CONTROLS • POWER SUPPLIES Pin 3 - Drain and Case TO39 Package (TO-205AF) Pin 1 - Source Underside View Pin 2 - Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS ID @Tcase = 25°C ID @Tcase = 100°C IDM VGS PD@ Tcase = 25°C RθJ-C RθJ-A TJ,Tstg Lead Temperature Drain Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Gate Source Voltage Maximum Power Dissipation Thermal Resistance Junction To Case Thermal Resistance Junction To Ambient Operating and Storage Temperature Range ( 1.6mm from case for 10 secs) 200V 3.5A 2.25A 14A ±20V 20W 6.25°C/W 175°C/W -55 to +150°C 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6445 Issue 1 2N6790 IRFF220 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS(th)* Gate Threshold Voltage IGSSF IGSSR IDSS Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current VGS = 0 VDS = VGS VGS = 20V VGS = -20V VDS = 160V. VGS = 10V VGS = 10V VDS = 15V VGS = 0 f = 1.0MHz VDD = 100V RG = 7.5Ω (MOSFET switching times are essentially independent of operating temperature.) Test Conditions ID = 1.0mA ID = 250μA Min. 200 2.0 Typ. Max. Unit V 4.0 100 -100 nA μA Ω S( ) 260 100 30 pF 40 50 50 50 ns Ω VGS =0 TC = 125°C ID = 2.25A ID = 3.5A IDS = 2.25A VDS = 25V 1.5 25 250 0.80 0.92 RDS(on)* Static Drain Source On-State Resistance gfs* Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Total Gate Charge Gate To Source Charge Gate To Drain (“Miller”) Charge ID = 3.5A VGS = 10V VDS = 100V ID = 3.5A 8.0 0.9 2.3 , 14.3 3.0 9.0 V 3.5 A nC IS ISM VSD trr QRR BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current (Body Diode) Source Current (Body Diode) Diode Forward Voltage* Reverse Recovery Time Reverse Recovery Charge symbol showing the intergal / 5 P-N junction rectifier. 14 1.5 400 4.3 V ns μC IS = 3.5A TJ = 25°C IF = 3.5A VGS = 0 TJ = 25°C di / dt = 100A/μs VDD = 50V Notes * Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6445 Issue 1