2N6796_03

2N6796 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) TMOS FET ENHANCEMENT N - CHANNEL 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200) typ. • V(BR)DSS = 100V • ID = 8A • RDSON = 0.18Ω 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 3 45° TO–39 PACKAGE (TO-205AF) Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain–Source Voltage VDGR Drain–Source Voltage (RGS = 1.0 mΩ) VGS Gate–Source Voltage ID Drain Current Continuous TCase = 25°C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25°C Derate above 25°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. VDS 100V 100V ±20V 8.0A 32A 25W 0.2W/°C –55 to +150°C 5.0°C/W 175°C/W 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3095 Issue 1 2N6796 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter V(BR)DSS VGS(th) IGSS IDSS rDS(on) V DS(on) Test Conditions VGS = 0 VDS=VGS VDS = 0 VGS = 0V VGS = 10V VGS = 10V VGS = 15V VDS = 25V ID = 0.25mA ID = 0.5mA VGS = ±20V Tj = 125°C ID = 5.0A TA = 125°C ID = 8.0A ID = 5.0A VGS = 0 Voltage1 Min. 100 2.0 Typ. Max. Unit 4.0 ±100 250 1000 0.18 0.35 1.56 V nA µA Ω V s( ) pF Ω Drain–Source Breakdown Voltage Gate Thresshold Gate–Body Leakage Zero Gate Voltage Drain Current Drain–Source On–Resistance1 Drain–Source On–Voltage1 Forward Transconductance1 Input Capacitance Output capacitance Reverse Transfer Capacitance Turn–On Delay RiseTime1 Turn off Delay FallTime1 Time1 Time1 VDS = Rated VDSS gfs Ciss Coss Crss td(on) tr td(off) tf VSD ton trr 3.0 350 150 50 9.0 900 500 150 30 75 40 45 f = 1.0MHZ VDD = 30V ID = 5.0A RG = 7.5 ohms RGEN = 50Ω ns SOURCE DRAIN DIODE RATING CHARACTERISTICS Diode Forward Voltage1 Forward Turn OnTime1 Time1 Reverse Recovery IS = Rated ID(on) VGS = 0 5.5 Negligible V ns 300 1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3095 Issue 1