2N6800LCC4

2N6800LCC4 MECHANICAL DATA Dimensions in mm (inches) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) ≈ 2.16 (0.085) 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS BVDSS ID RDS(on) 400V 3.0A 1.0Ω 10 9 8 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. D G S FEATURES • • • • Dynamic dv/dt Rating Simple Drive requirements Ease of Paralleling Hermetic Ceramic Surface Mount Package LCC4 CERAMIC SURFACE MOUNT PACKAGE GATE DRAIN SOURCE PINS 4,5 PINS 1,2,15,16,17,18 PINS 6,7,8,9,10,11,12,13 ABSOLUTE MAXIMUM RATINGS T VDSS ID IDM VGSS Ptot Tj,Tstg Rthj-mb dv/dt NOTES: Drain - Source Voltage Drain Current Drain Current CASE = 25°C unless otherwise stated 400V 3A 2A 12A ±20V 25W 0.20W/°C -55 to +150°C 5.0°C/W 4V/ns - Continuous (VGS = 10V, TC = 25°C) - Continuous (VGS = 10V, TC = 100°C) - Pulsed 2 Gate - Source Voltage Total Power Dissipation at Tcase ≤ 25°C De-rate Linearly above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction – Mounting Base Peak Diode Recovery 3 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle, δ 2% 3) TJ ≤ 150°C, VDD ≤ BVDSS, Suggested RG = 7.5 , ISD ≤ 1.5A, di/dt ≤ 50A/µs Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7820, ISSUE 1 2N6800LCC4 STATIC ELECTRICAL RATINGS (T Symbol BVDSS IDSS IGSS VGS(TH) case =25°C unless otherwise stated) Parameter Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Test Conditions VGS = 0V VDS = 320V VGS = ±20V VDS ≥ VGS ID = 250µA VGS = 0V TC = 125°C VDS = 0V ID = 250µA TC = 125°C TC = -55°C VGS = 10V ID = 2A TC = 125°C VGS = 10V ID = 3A IDS = 2A VDS ≥ 15V Min. Typ. 400 2.0 1.0 2 - Max. 25 250 ±100 4.0 5.0 1.0 2.40 1.15 - Unit V µA nA Gate Threshold Voltage V RDS(ON) gFS Drain – Source On State Resistance 3 3 Ω S Forward Transconductance Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd Td(on) tr Td(off) tf VDS = 25V f = 1.0MHz VGS = 0V 19.1 2 2 620 200 75 - 33 5.8 19.9 30 35 55 35 ns nC pF Reverse Transfer Capacitance Total Gate Charge 2 Gate – Source Charge Gate – Drain Charge Turn-On Delay Rise Time Turn-Off Delay Time Fall Time VDS = 200V VGS = 10V ID = 3A 1.0 6.7 - VDD = 200V RG = 7.5Ω ID = 3A VGS = 10V - SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Continuous Source Current (MAX) Pulsed Source Current (MAX) Diode Forward Voltage 2 1 VGS = 0V Is = 3A Is = 3A VDD ≤ 50V - - 3 12 1.4 700 6.2 A V ns µC Reverse Recovery Time Reverse Recovery Charge 2 VGS = 0V di/dt=100A/µs Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7820, ISSUE 1