2N6845

2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. VDSS ID(cont) RDS(on) 2.54 (0.100) -100V -4.0A 0.60Ω FEATURES • HERMETICALLY SEALED TO–39 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 3 45° • SCREENING OPTIONS AVAILABLE PIN 3 – Drain TO–39 (TO-205AF) METAL PACKAGE PIN1 – Source PIN 2 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL RθJC Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) ±20V -4.0A -2.6A -16A 20 W 0.16 W/°C –55 to 150°C 300°C 6.25°C/W Notes 1) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5748 Issue 2 2N6845 IRFF9120 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance 1 Test Conditions VGS = 0 ID = - 1mA VGS = - 10V VGS = - 10V VDS = VGS 1 Min. - 100 Typ. Max. Unit V ID = - 1mA ∆BVDSS Temperature Coefficient of Reference to 25°C ID = - 2.6A ID = - 4.0A ID = -250µA ID = -2.6A VGS = 0 TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = - 25V f = 1MHz VGS = -10V VDS = -50V VDD = -50V ID = - 4.0A RG = 7.5Ω ID = -4.0A 4.3 1.3 1.0 -2 1.25 - 0.10 0.60 0.69 -4 -25 -250 100 -100 380 170 45 16.3 4.7 9.0 60 100 50 70 V / °C Ω V S µA nA VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton Forward Transconductance VDS > -15V VDS = - 80V Drain-to-Source Leakage Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time pF nC ns SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage1 Reverse Recovery Time1 Reverse Recovery Charge1 Forward Turn–On Time Mosfet symbol showing the G D - 4.0 - 16 - 4.8 200 3.1 Negligible A V ns µC integral reverse p-n junction diode S IS = - 4.0A VGS = 0V IF = -4.0A TJ = 25°C TJ = 25°C di / dt ≤ -100A/µs VDD ≤ -50V Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5748 Issue 2