2N7000CSM_06

2N7000CSM MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0.31 rad. (0.012) 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 3 FEATURES 0.76 ± 0.15 (0.03 ± 0.006) 2 1 • V(BR)DSS = 60V • RDS(ON) = 5Ω A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) • ID = 200mA • Hermetic Ceramic Surface Mount package 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Gate PAD 2 – Source PAD 3 – Drain • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS VGS ID IDM PD Tj Tstg Drain – Source Voltage Gate – Source Voltage Drain Current Pulsed Drain Current * Power Dissipation Storage Temperature Range @ TCASE = 25°C Operating Junction Temperature Range @ TCASE = 25°C 60V ±40V 200mA 500mA 300mW –55 to 150°C –55 to 150°C * Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7022 Issue: 1 2N7000CSM ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter STATIC CHARACTERISTICS V(BR)DSS Drain – Source Breakdown Voltage VGS(th) IGSS IDSS ID(on)* Gate Threshold Voltage Gate – Body Leakage Current Zero Gate Voltage Drain Current On–State Drain Current VGS = 0V VDS = VGS VGS = ±20V VDS = 60V ID = 10μA ID = 0.25mA VDS = 0V VGS = 0V TCASE = 125°C VDS≥2VDS(ON) VGS = 4.5V VGS = 10V ID = 0.5A VGS = 4.5V VGS = 10V VGS = 10V VDS = 25V VGS = 0V f = 1MHz TCASE = 125°C ID = 75mA ID = 0.5A ID = 0.5A 100 60 25 5 pF 75 5 9 0.4 2.5 60 0.8 70 3.0 -10 1.0 1.0 V nA μA mA mA Ω V ms Test Conditions Min. Typ. Max. Unit RDS(on)* Drain – Source On Resistance VDS(on)* gFS* Ciss Coss Crss Drain – Source On Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tON tOFF Turn–On Time Turn–Off Time VDD = 30V RL = 150Ω ID = 0.2A VGEN = 10V RG = 25Ω 10 ns 10 * Pulse Test: PW = 80 μs , δ ≤ 1% Parameter RθJA Thermal Resistance, Junction to Ambient Min. Typ. Max. 416 Unit °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7022 Issue: 1