2N7218

N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available • • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD EAS dv/dt TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at Single Pulse Avalanche Energy Peak Diode Recovery(3) Junction Temperature Range Storage Temperature Range Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C (2) 100V ±20V 28A 20A 112A 100W 0.8W/°C 250mJ 5.5V/ns -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 1.25 Units °C/W Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 25V, L ≥ 470µH, Peak IL = 28A, Starting TJ = 25°C (3) (4) @ ISD ≤ 28A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8085 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com N-CHANNEL POWER MOSET IRFM140 / 2N7218 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbols BVDSS ∆BVDSS ∆TJ RDS(on) VGS(th) gfs (4) (4) Parameters Drain-Source Breakdown Voltage Temperature Coefficent of Breakdown Voltage Static Drain-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate-Source Leakage Reverse Gate-Source Leakage Test Conditions VGS = 0 Reference to 25°C VGS = 10V VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 Min. 100 Typ Max. Units V ID = 1.0mA ID = 1.0mA ID = 20A ID = 28A ID = 250µA I DS = 21A VDS = 0.8BVDSS TJ = 125°C 0.13 0.077 0.125 2 9.1 25 250 100 4 V/°C Ω V S( ) IDSS IGSS IGSS µA VGS = 20V VGS = -20V nA -100 DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 VDS = 25V f = 1.0MHz VGS = 10V ID = 28A VDS = 0.5BVDSS VDD = 50V ID = 20A RG = 9.1Ω 30 2.4 12 1660 550 120 59 12 30.7 21 145 64 105 ns nC pF SOURCE-DRAIN DIODE CHARACTERISTICS IS ISM (1) Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 28A VGS = 0 IS = 28A VDD ≤ 50V TJ = 25°C di/dt = 100A/µs TJ = 25°C 28 112 1.5 400 2.9 A VSD trr (4) (4) V ns Qrr (4) µC S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8085 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRFM140 / 2N7218 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC TO-254AA Pin 1 - Drain Pin 2 - Source Pin 3 - Gate S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8085 Issue 1 Page 3 of 3