2N7228

2N7228 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED ISOLATED PACKAGE • AVALANCHE ENERGY RATING 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 500V 12A 0.415Ω 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS • ALSO AVAILABLE IN A SURFACE MOUNT PACKAGE • EASE OF PARALLELING TO–254AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL RθJC RθCS RθJA Gate – Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25°C) Continuous Drain Current (VGS = 10V , Tcase = 100°C) 1 Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 1 Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature measured 1/16” (1.6mm) from case for 10 sec. Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction to Ambient ±20V 12A 8A 48A 150W 1.2W/°C 750mJ 12A 15mJ 3.5V/ns –55 to 150°C 300°C 0.83°C/W 0.21°C/W 48°C/W Notes 1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature 2) @ VDD = 50V , L ≥ 9.4mH , RG = 25Ω , Peak IL = 12A , Starting TJ = 25°C 3) @ ISD ≤ 12A , di/dt ≤ 130A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 4/99 2N7228 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Breakdown Voltage Static Drain – Source On–State Resistance 2 Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 2 Min. 500 Typ. Max. Unit V ID = 1mA ∆BVDSS Temperature Coefficient of Reference to 25°C ID = 8A ID = 12A ID = 250µA IDS = 8A VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V 2 6.5 0.68 0.415 0.515 4 25 250 100 –100 2700 600 240 12 55 5 27 120 19 70 35 190 170 130 12 48 V / °C Ω V )Ω( 4/99 VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss CDC Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD Forward Transconductance VDS ≥ 15V VGS = 0 S(Ω µA nA Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain – Case Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn– On Delay Time Rise Time Turn–Off Delay Time Fall Time VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 12A VDS = 0.5BVDSS VDD = 250V ID = 12A RG = 2.35Ω pF nC ns SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 1 A V ns µC Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Forward Turn–On Time 2 IS = 12A VGS = 0 IF = 12A TJ = 25°C TJ = 25°C Negligible 8.7 1.7 1600 14 di / dt ≤ 100A/µs VDD ≤ 50V PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die LS Internal Source Inductance Measured from 6mm down source lead to source bond pad 8.7 Notes 1) Repetitive Rating – Pulse width limited by Maximum 2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% Junction Temperature * IS Current limited by pin diameter. nH Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk