0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BC378_10

BC378_10

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BC378_10 - SILICON EPITAXIAL NPN TRANSISTOR - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
BC378_10 数据手册
SILICON EPITAXIAL NPN TRANSISTOR BC378 • • • Hermetic TO-18 Metal Package Designed For General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCES VCEO VEBO IC IB PD TJ Tstg Collector – Emitter Voltage (VEB = 0V) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at Junction Temperature Range Storage Temperature Range 30V 25V 6V 1.0A 0.2A 375mW 1.0W 175°C -65 to +175°C TA ≤ 25°C TC ≤ 75°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 400 100 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8890 Issue 1 Page 1 of 2 Website: http://www.semelab-tt.com SILICON EPITAXIAL NPN TRANSISTOR BC378 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols ICES V(BR)CEO V(BR)EBO VBE(sat) (1) (1) Parameters Collector Cut off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage Forward-current transfer ratio Test Conditions VBE = 0V IC = 2mA IE = 10µA IC = 500mA IC = 500mA IC = 100mA IC = 100mA IC = 300mA VCE = 30V IB = 0 IC = 0 IB = 50mA IB = 50mA VCE = 1.0V VCE = 1.0V VCE = 1.0V Min. Typ Max. 15 Units nA 25 6 V 1.2 0.7 740 75 35 260 mV - VCE(sat) VBE hFE (1) (1) (1) DYNAMIC CHARACTERISTICS fT Cobo Transition Frequency Output Capacitance IC = 50mA VCB = 10V f = 1.0MHz Input Capacitance VEB = 0.5V f = 1.0MHz IC = 0 30 pF VCE = 10V IE = 0 100 10 MHz pF Cibo Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) TO-18 (TO-206AA) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 12.7 (0.500) min. Website: http://www.semelab-tt.com Document Number 8890 Issue 1 Page 2 of 2
BC378_10
### 物料型号 - 型号:BC378

### 器件简介 - 这是一个硅外延NPN晶体管,由Semelab Limited生产,采用密封的TO-18金属封装,设计用于通用放大器、驱动级和信号处理应用。

### 引脚分配 - 引脚1:发射极(Emitter) - 引脚2:基极(Base) - 引脚3:集电极(Collector)

### 参数特性 - 绝对最大额定值: - VCES:30V(集电极-发射极电压,VEB=0V) - VCEO:25V(集电极-发射极电压,IB=0) - VEBO:6V(发射极-基极电压,IC=0) - IC:1.0A(集电极电流) - IB:0.2A(基极电流) - PD:375mW(总功率耗散,TA=25°C) - TC S75°C:1.0W - TJ:175°C(结温范围) - Tstg:-65至+175°C(存储温度范围)

- 热特性: - ROJA:400°C/W(结到环境的热阻) - ROJC:100°C/W(结到外壳的热阻)

### 功能详解 - 该晶体管具有低集电极截止电流ICES、高击穿电压V(BR)CEO和V(BR)EBO、低饱和电压VBE(sat)和VCE(sat)、高电流增益hFE等特点,适用于需要高增益和高击穿电压的应用。

### 应用信息 - 适用于通用放大器、驱动级和信号处理应用。

### 封装信息 - 封装类型:TO-18(TO-206AA)金属封装。
BC378_10 价格&库存

很抱歉,暂时无法提供与“BC378_10”相匹配的价格&库存,您可以联系我们找货

免费人工找货