0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BCU83D

BCU83D

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BCU83D - NPN EPITAXIAL PLANAR SILICON TRANSISTOR - Seme LAB

  • 数据手册
  • 价格&库存
BCU83D 数据手册
BCU83D MECHANICAL DATA Dimensions in mm 6 .2 5 .0 1 .5 1 .5 1 .0 0 .5 0 .7 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal For High current Switching Application 5 6 4 .2 5 .9 FEATURES • LOW VCE(SAT) 2 .4 4 3 2 1 0 .4 0 .8 2 .4 0 .8 2 .4 1 .0 0 .4 1 .8 • HIGH CURRENT CAPACITY • FAST SWITCHING SPEED 1: 2: 3: 4: 5: 6: B ase 1 E m itte r E m itte r B ase 2 C o lle c to C o lle c to 1 2 r2 r1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP IB PC PT Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) Total Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) Junction Temperature Storage Temperature Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk 60V 20V 6V 5A 8A 1A 1.5W 2W 150°C –55 to 150°C Prelim.6/99 Tj Tstg Magnatec. BCU83D DYNAMICS CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO Collector – Emitter Base Breakdown Voltage Collector – Base Breakdown Voltage V(BR)EBO ICBO IEBO hFE1* hFE2* hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Emitter Base Breakdown Voltage Collector Cut–Off Current Emitter Cut–Off Current DC Current Gain DC Current Gain Collector – Emitter SaturationVoltage Base – Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn – On Time Storage Time Fall Time Test Conditions IC = 1mA IC = 10mA IE = – 10mA VCB = 50V VEB = 5V VCE = 2V VCE = 2V RBE = 00 IE = 0 IC = 0 IE = 0 IC = 0 IC = 500mA IC = 3A IC = 500mA IB = 60mA IB = 60mA IC = 500mA f = 1MHz Min. 20 60 6 Typ. Max. Unit. V V V 100 100 160 95 0.8 220 1 220 45 30 300 40 1 500 1.5 560 nA –— DC Current Gain Ratio (small/large) VCE = 2V IC = 3A IC = 3A VCE = 10V VCB = 10V mV V MHz pF ns See specified test circuit See specified test circuit See specified test circuit Switching Time Test Circuit PW =20 m s D C ≤1 % IN P U T IB1 IB2 RB OUTPUT 50R VR + 1 0 0 µF V B E = -5 V 10IB 1 =- 10IB 2 =IC =2A + 4 7 0 µF RL 5R V C C =10V Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk Prelim.6/99 BCU83D Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk Prelim.6/99 BCU83D Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk Prelim.6/99
BCU83D 价格&库存

很抱歉,暂时无法提供与“BCU83D”相匹配的价格&库存,您可以联系我们找货

免费人工找货