BCY71DCSM

SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TA = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range Each Side Total Device -45V -45V -5V -200mA -200mA 350mW 500mW * 2mW/° C 2.9mW/° C -65 to +200° C -65 to +200° C THERMAL PROPERTIES (Each Side.) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case * Total device power dissipation limited by package. Min. Typ. Max. Units 500 ° C/W 150 ° C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Document Number 8108 Issue 1 W ebsite: http://www.semelab.co.uk SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols ICES IEBO VCE(sat)** VBE(sat)** Parameters Collector-Emitter Cut-Off Current Emitter-Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Conditions VCE = -20V VCE = -45V VEB = -5V IC = -10mA IC = -50mA IC = -10mA IC = -50mA IC = -0.01mA IC = -0.1mA VBE = 0 VBE = 0 IC = 0 IB = -1.0mA IB = -5mA IB = -1.0mA IB = -5mA VCE = -1.0V VCE = -1.0V VCE = -1.0V VCE = -1.0V VCE = -1.0V Min. Typ. Max. Units -0.1 -10 10 -0.25 -0.5 -0.6 -0.9 -1.2 60 80 90 100 15 600 V µA hFE** Forward-current transfer ratio IC = -1.0mA IC = -10mA IC = -50mA DYNAMIC CHARACTERISTICS IC = -0.1mA fT Transition Frequency f = 10.7MHz IC = -10mA f = 100MHz hfe Cobo Cibo Small-Signal Current Gain IC = -1.0mA f = 1.0KHz IE = 0 f = 1.0MHz IC = 0 f = 1.0MHz IC = -0.1mA Rg = 2K IC = -1.0mA f = 1.0KHz IC = -1.0mA f = 1.0KHz IC = -1.0mA f = 1.0KHz VCE = -10V 10 VCE = -10V VCE = -5V 2 VCE = -10V dB VEB = -1.0V VCB = -10V VCE = -10V VCE = -20V VCE = -20V 15 MHz 250 100 400 Output Capacitance Input Capacitance 6 pF 8 NF Noise Figure f = 10Hz To 10KHz hie hre hoe Input Impedance Reverse Voltage Ratio 2 12 20 -4 x 10 60 µS K Output Admittance ** Pulse Test: tp = 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Document Number 8108 Issue 1 W ebsite: http://www.semelab.co.uk SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM Mechanical Data Dimensions in mm (inches) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk W ebsite: http://www.semelab.co.uk Document Number 8108 Issue 1 4.32 ± 0.13 (0.170 ± 0.005)