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BDS10

BDS10

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BDS10 - SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
BDS10 数据手册
BDS10 BDS11 BDS12 BDS10SMD BDS11SMD BDS12SMD BDS10SMD05 BDS11SMD05 BDS12SMD05 MECHANICAL DATA Dimensions in mm(inches) 10.6 (0.42) 0.8 (0.03) 4.6 (0.18) SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES FEATURES • • • • • 1.0 (0.039) 2.70 (0.106) 16.5 (0.65) 3.70 Dia. Nom 123 12.70 (0.50 min) HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION) 1.5(0.53) 10.6 (0.42) APPLICATIONS • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER 7.54 (0.296) 0.76 (0.030) 2.54 (0.1) BSC TO220M - TO220 Metal Package - Isolated (TO-257AB) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. 3.05 (0.120) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. 1 3 0 .7 6 (0 .0 3 0 ) m in . 1 3 10.16 (0.400) 0.127 (0.005) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 5.72 (.225) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0.76 (0.030) min. 2 0.127 (0.005) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.50 (0.020) max. SMD1 - Ceramic Surface Mount Package (TO-276AB) Pin 1 – Base SMD05 - Ceramic Surface Mount Package (TO-276AA) Pin 3 – Emitter Pin 2 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDS10 VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase = 25°C Storage Temperature Junction Temperature 60V 60V BDS11 BDS12 80V 100V 80V 100V 5V 15A 5A 43.75W –65 to 200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3254 Issue 3 BDS10 BDS11 BDS12 BDS10SMD BDS11SMD BDS12SMD BDS10SMD05 BDS11SMD05 BDS12SMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 VEB = 5V VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE = 50V Min. Typ. Max. 500 500 500 1.0 1.0 1.0 1.0 Unit µA ICEO mA IEBO VCEO(sus)* mA VCE(sat)* VBE(sat)* VBE* hFE* fT BDS10 Collector - Emitter BDS11 sustaining voltage (IB = 0) BDS12 Collector - Emitter IC = 5A saturation voltage IC = 10A Base - Emitter IC = 10A saturation voltage Base - Emitter voltage IC = 5A IC = 0.5A DC Current Gain IC = 5A IC = 10A IC = 0.5A Transition frequency f = 1MHz IC = 100mA IB = 0.5A IB = 2.5A IB = 2.5A VCE = 4V VCE = 4V VCE = 4V VCE = 4V VCE = 4V 60 80 100 1.0 3 2.5 1.5 250 150 V V V V 40 15 5 3 MHz *Pulsed : Pulse duration = 300 µs , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton ts tr On Time Storage Time Fall Time (td + tr) Test Conditions IC = 4A VCC = 30V IB1 = 0.4A IC = 4A VCC = 30V IB1 = –IB2 = 0.4A Max. 0.7 1.0 0.8 Unit µs µs µs THERMAL CHARACTERISTICS Test Conditions RθJ-C Thermal Resistance Junction to Case Max. 4.0 Unit °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3254 Issue 3
BDS10
### 物料型号 - BDS10SMD05:BDS10的表面贴装版本。 - BDS11SMD05:BDS11的表面贴装版本。 - BDS12SMD05:BDS12的表面贴装版本。

### 器件简介 这些器件是硅NPN外延基在TO220金属和陶瓷表面贴装封装中的元件,具有高可靠性,适用于军事和太空领域,并且可以进行CECC级别的筛选。

### 引脚分配 - TO220M-TO220金属封装:引脚1为基极,引脚2为集电极,引脚3为发射极。 - SMD1-陶瓷表面贴装封装:引脚1为基极,引脚2为集电极,引脚3为发射极。

### 参数特性 - 绝对最大额定值:包括集电极-基极电压(VCBO)、集电极-发射极电压(VCEO VEBO)、发射极-基极电压(VEBO)、集电极电流(IE,lc)、基极电流(IB)和总功耗(Ptot)。 - 电气特性:包括集电极截止电流(CBO)、集电极截止电流(ICEO)、发射极截止电流(EBO)、集电极-发射极维持电压(VCEO(sus))、集电极-发射极饱和电压(VCE(sat))、基极-发射极饱和电压(VBE(sat))、基极-发射极电压(VBE)和直流电流增益(hFE)。 - 开关特性:包括导通时间(ton)、存储时间(ts)和下降时间(t)。 - 热特性:包括结到壳的热阻(ReJ-C)。

### 功能详解应用信息 这些器件适用于电力线性和开关应用,以及一般用途的电力领域。

### 封装信息 - TO220M-TO220金属封装:金属封装,隔离型(TO-257AB)。 - SMD1-陶瓷表面贴装封装:陶瓷表面贴装封装(TO-276AA)。
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