BDX66B

PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • • • Hermetic Metal TO3 Package. Ideal for General Purpose Low Frequency Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Peak Collector Current Base Current TC = 25°C Total Power Dissipation at De-rate Linearly Above 25°C Junction Temperature Range Storage Temperature Range BDX66 -60V -60V 66A 66B 66C -80V -100V -120V -80V -100V -120V -5V -20A -0.25A 150W 0.855 W/°C -55 to +200°C -55 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Max. 1.17 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8760 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions BDX66 V(BR)CEO (1) Min. -60 -80 -100 -120 Typ. Max. Units Collector-Emitter Breakdown Voltage IC = -100mA BDX66A BDX66B BDX66C V ICEO Collector Cut-Off Current VCE =0.5×VCEO(max) IE = 0 IB =0 -1.0 -1.0 VCB =VCBO(max) VCB = -40V VCB = -50V VCB = -60V VCB = -70V BDX66 BDX66A BDX66B BDX66C IC = 0 IB = -40mA VCE = -3V 2 IC = -1.0A 2000 1000 1000 ICBO Collector-Base Cut-Off Current IE = 0 TJ =200°C mA -5 IEBO VCE(sat) VBE VF (1) (1) Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage Diode Forward Voltage Forward-current transfer ratio VEB = -5V IC = -10A IC = -10A IF = 10A -5 -2 -2.5 V hFE (1) VCE = -3V IC = -10A IC = -16A - DYNAMIC CHARACTERISTICS hfe Magnitude of common emitter small-signal shortcircuit forward current transfer ratio Output Capacitance Turn-On Time Turn-Off Time IC = -5A f = 1.0MHz VCB = -10V f = 1.0MHz IC = -10A -IB1 = IB2 = 40mA VCC = -12V 1.0 3.5 µS IE = 0 300 pF VCE = -3V 50 - Cobo ton toff Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8760 Issue 1 Page 2 of 3 PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO-3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter Case – Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com 22.23 (0.875) max. Document Number 8760 Issue 1 Page 3 of 3