BFC12

LAB SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) SEME BFC12 4TH GENERATION MOSFET Hex Nut M 4 (4 places) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R= 4 .0 (0 .1 57 ) (2 P lac e s) VDSS ID(cont) RDS(on) * Source 2 may be omitted, shorted to Source 1 or used for Gate drive circuit. 600V 38A 0.15Ω Terminal 1 Source 2* Terminal 3 Gate Terminal 2 Terminal 4 Drain Source 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM , ILM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 and Inductive Current Clamped Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 600 38 152 ±30 520 4.16 –55 to 150 300 V A A V W W / °C °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain – Source Breakdown Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage Test Conditions VGS = 0V , ID = 250µA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 2.5mA 2 Min. 600 38 0.15 250 1000 ±100 4 Typ. Max. Unit V A Ω µA nA V 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6Ω Min. Typ. 5540 1025 375 242 30 118 15 24 46 13 Max. Unit 6500 1450 570 370 45 175 30 48 75 26 ns nC pF SEME BFC12 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/µs 330 6 660 12 Test Conditions Min. Typ. Max. Unit 38 A 152 1.8 1200 24 V ns µC PACKAGE CHARACTERISTICS LD LS VIsolation CIsolation Torque Characteristic Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance f = 1MHz 2500 35 13 Min. Typ. 3 5 Max. Unit nH V pF in–lbs Maximum Torque for Device Mounting Screws and Electrical Terminations THERMAL CHARACTERISTICS RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Min. Typ. Max. Unit 0.24 °C/W 0.05 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94