BFC17

LAB SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) SEME BFC17 4TH GENERATION MOSFET Hex Nut M 4 (4 places) 1 R 2 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R= 4 .0 (0 .1 57 ) (2 P lac e s) VDSS 600V 57A ID(cont) RDS(on) 0.090Ω * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. Terminal 1 Source* Terminal 3 Gate Terminal 2 Terminal 4 Drain Source* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM , ILM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 and Inductive Current Clamped Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 600 57 228 ±30 690 5.52 –25 to 125 300 V A A V W W / °C °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain – Source Breakdown Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage Test Conditions VGS = 0V , ID = 250µA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 5.0mA 2 Min. 600 57 0.090 250 1000 ±100 4 Typ. Max. Unit V A Ω µA nA V 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6Ω Min. Typ. Max. Unit 11670 14000 1810 545 446 64 208 22 24 65 12 2530 870 670 95 315 45 50 95 25 ns nC pF SEME BFC17 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/µs 400 13 800 26 Test Conditions Min. Typ. Max. Unit 57 A 228 1.8 1600 50 V ns µC PACKAGE CHARACTERISTICS LD LS VIsolation CIsolation Torque Characteristic Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance f = 1MHz 2500 70 13 Min. Typ. 3 5 Max. Unit nH V pF in–lbs Maximum Torque for Device Mounting Screws and Electrical Terminations THERMAL CHARACTERISTICS RθJC RθCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Min. Typ. 0.05 Max. Unit 0.18 °C/W CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94