BFC52

LAB TO247–AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC52 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1 2 3 1 .65 (0.065) 2.13 (0.084) 2 .87 (0.113) 3.12 (0.123) 0 .40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC VDSS ID(cont) RDS(on) 500V 9.5A 0.85Ω Terminal 1 Gate Terminal 3 Source 19.81 (0.780) 20.32 (0.800) Terminal 2 Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 500 9.5 38 ±30 180 –55 to 150 300 V A A V W °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250µA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 9.5 0.85 Min. 500 Typ. Max. Unit V 250 1000 ±100 4 µA nA V A Ω 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.8Ω Min. Typ. 740 167 63 33 5.6 16 10 14 35 11 Max. Unit 950 234 94 55 8 24 20 28 48 22 ns nC pF SEME BFC52 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/µs 108 1.2 216 2.5 Min. Typ. Max. Unit 9.5 A 38 1.3 432 5.0 V ns µC SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Min. 180 Typ. Max. Unit W SOA2 ILM Safe Operating Area Inductive Current Clamped 180 38 W A THERMAL CHARACTERISTICS RθJC RθJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Min. Typ. Max. Unit 0.68 °C/W 40 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94