BFC62

LAB TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) 5.33 (0.210) 4.83 (0.190) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. 4.83 (0.190) 3.56 (0.140) SEME BFC62 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 2 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230) 123 14.73 (0.580) 12.70 (0.500) 6.35 (0.250) 4.60 (0.181) 1.78 (0.070) 0.99 (0.390) VDSS ID(cont) RDS(on) 0.66 (0.026) 0.41 (0.016) 2.92 (0.115) 2.03 (0.080) 800V 4.7A 2.40Ω 2.54 (0.100) N o m. 5.08 (0.200) N o m. 1.02 (0.040) 0.38 (0.015) Terminal 1 Gate Terminal 2 Drain Terminal 3 Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 800 4.7 18.8 ±30 125 –55 to 150 300 V A A V W °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain – Source Breakdown Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage Test Conditions VGS = 0V , ID = 250µA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA 2 Min. 800 4.7 2.40 250 1000 ±100 4 Typ. Max. Unit V A Ω µA nA V 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/93 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] RG = 1.8Ω Min. Typ. 790 116 44 38 4.5 16 10 9 31 15 Max. Unit 950 163 66 55 7 24 20 18 47 30 ns nC pF SEME BFC62 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] dls / dt = 100A/µs 160 1.5 320 3.0 Test Conditions Min. Typ. Max. Unit 4.7 A 18.8 1.3 640 6.0 V ns µC SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Min. 125 Typ. Max. Unit W SOA2 ILM Safe Operating Area Inductive Current Clamped 125 18.8 W A THERMAL CHARACTERISTICS RθJC RθJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Min. Typ. Max. Unit 1.0 °C/W 80 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/93