BFT30

SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • • • Hermetic TO-18 Metal Package Designed For General Purpose Amplifiers, and Audio Driver Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) BFT29 VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 90V 80V BFT30 BFT31 70 60 60 50 5V 1.0A 360mW 2mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Max 486 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Se Coventry Road, Lutterworth, Leicestershire, LE17 4JB Se melab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8963 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CBO Parameters Test Conditions IC = 10µA IE = 0 BFT29 BFT30 BFT31 BFT29 Min. 90 70 60 80 60 50 5 Typ. Max. Units Collector-Base Breakdown Voltage V V(BR)CEO (1) Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cut-Off Current IC = 10mA IB = 0 IE = 10µA BFT30 BFT31 V V(BR)EBO ICBO IC = 0 V 100 nA VCB = Rated VCEO, IE = 0 BFT29 IC = 1.0mA VCE = 10V BFT30 BFT31 BFT29 IC = 10mA VCE = 10V BFT30 BFT31 BFT29 IC = 100mA VCE = 10V 25 45 45 30 50 50 50 75 100 30 50 50 20 25 25 250 250 300 hFE (1) Forward-Current Transfer Ratio BFT30 BFT31 BFT29 IC = 500mA VCE = 10V BFT30 BFT31 BFT29 IC = 1.0A VCE = 10V BFT30 BFT31 BFT29 0.95 0.75 0.75 1.6 1.0 1.0 1.1 2.0 V IC = 500mA IB = 50mA VCE(sat) (1) BFT30 BFT31 BFT29 Collector-Emitter Saturation Voltage IC = 1.0A IB = 100mA IC = 500mA IC = 1.0A BFT30 BFT31 VBE(sat) (1) Base-Emitter Saturation Voltage IB = 50mA IB = 100mA S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8963 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 40mA f = 20MHz Output Capacitance VCB = 10V f = 1.0MHz IE = 0 8.5 10 pF VCE = 10V 80 95 MHz Cobo Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% MECHANICAL DATA Dimensions in mm (inches) 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 0 .4 8 (0 .0 1 9 ) 0 .4 1 (0 .0 1 6 ) d ia . 2 .5 4 (0 .1 0 0 ) Nom . !  TO-18 (TO-206AA) Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 1 2 .7 (0 .5 0 0 ) m in . ) 0 0 5 . . n i 0 ( m 7 . 2 1 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 Website: http://www.semelab-tt.com Document Number 8963 Issue 1 Page 3 of 3