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BFW43

BFW43

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BFW43 - PNP SILICON TRANSISTOR - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
BFW43 数据手册
BFW43 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. FEATURES • PNP High Voltage Planar Transistor • Hermetic TO18 Package 2.54 (0.100) Nom. 3 2 1 • Full Screening Options Available TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Tstg TJ RθJA RθJC Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation TA = 25 °C Total Device Dissipation TC = 25 °C Storage Temperature Max Operating Junction Temperature Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case -150V -150V -6V 0.1A 0.4W 1.4W –55 to 200°C 200°C 438°C/W 125°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5989 Issue 1 BFW43 ELECTRICAL CHARACTERISTICS Continued (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit. -150 V V(BR)CBO Collector - Base Breakdown Voltage (1) IC = -10µA , IE = 0 V(BR)CEO Collector - Emitter Breakdown Voltage (1) IC =- 2mA , IB = 0 VCB = -100V , IE = 0 ICBO Colllector Cut Off Current VCB = -100V , IE = 0 IE = -10µA , IC = 0 TA =125 °C -150 V -0.2 -0.03 -6 -10 -10 nA µA V V(BR)EBO Emitter - Base Breakdown Voltage (1) VCE(sat) Collector - Emitter Saturation Voltage (1) IC =-10mA , IB = -1mA -0.1 -0.5 V VBE(sat) Base - Emitter Saturation Voltage (1) IC =-10mA , IB = -1mA IC =-1mA, VCE = -10V IC =-10mA, VCE = -10V IC =-10µA, VCE = -10V 40 40 TA = -55 °C -0.74 85 100 30 50 60 20 -0.9 V hFE DC Current Gain (1) fT Current Gain - Bandwith Product IC =-1mA ,VCE =-10V, f=20 MHZ IC =-10mA VEB =-0.5V , IE = 0 , f=1 MHZ MHZ CEBO Emitter- Base Capacitance 25 pF CCBO Collector- Base Capacitance VCB =-5V , IE = 0 , f=1 MHZ 5 7 pF (1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5989 Issue 1
BFW43
1. 物料型号: - 型号为BFW43。

2. 器件简介: - BFW43是一款PNP高电压平面晶体管,采用密封的TO18金属封装。

3. 引脚分配: - PIN 1 – 发射极(Emitter) - PIN 2 – 基极(Base) - PIN 3 – 集电极(Collector)

4. 参数特性: - 集电极-基极电压(VCBO):-150V - 集电极-发射极电压(VCEO):-150V - 发射极-基极电压(VEBO):-6V - 集电极电流(Ic):0.1A - 总器件耗散功率(PD):在TA = 25°C时为0.4W,在Tc = 25°C时为1.4W - 存储温度(Tstg):-55至200°C - 最大工作结温(TJ):200°C - 热阻(ROJA):438°C/W(结到环境) - 热阻(ReJC):125°C/W(结到外壳)

5. 功能详解: - 该晶体管具有高电压PNP特性,适用于需要高电压、高功率的应用场合。其密封的TO18金属封装提供了良好的热性能和机械强度。

6. 应用信息: - 适用于高电压、高功率的电子应用,如电源、放大器等。

7. 封装信息: - 采用TO-18金属封装,这是一种小型、密封的金属封装,适用于高可靠性和高热导性的应用。
BFW43 价格&库存

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