BFX34

BFX34 MECHANICAL DATA Dimensions in mm (inches) HIGH CURRENT GENERAL PURPOSE TRANSISTOR DESCRIPTION: The BFX34 is a silicon Epitaxial Planar NPN transistor in a TO-39 case, intended for high current applications. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drive inverters. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 FEATURES • SILICON EPITAXIAL NPN TRANSISTOR • HIGH SPEED, LOW SATURATION SWITCH • CECC SCREENING OPTIONS 45° TO39 (TO-205AD) Package Underside View PIN 2 – BASE PIN1 – EMITTER PIN 3 – COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB Ptot TSTG TJ Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continious Collector Current Peak Repetitive Collector Current Continious Base Current Total Device Dissipation @ TA ≤ 25°C @ TC ≤ 25°C Storage Temperature Range Junction Temperature 120V 60V 6V 2A 5A 1A 0.87W 5W –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5569 Issue 1 BFX34 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter ICES IEBO V(BR)CBO* VCEO(sus)* VEBO* VCE(sat)* VBE(sat)* hFE* Collector Cut-off Current Emitter Cut-off Current Collector – Base Breakdown Voltage Emitter– Base Voltage Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Test Conditions VCE = 60V VEB = 4V IC = 5mA IE = 1mA IC = 5A IC = 5A IC = 1A IC = 1.5A IC = 2A IC = 0.5A f = 20MHz IC = 0 f = 1MHz VCB = 10V f = 1MHz VCC = 20V IC = 0.5A IB1 = – IB2= 0.5A IE = 0 VEB = 0.5V VBE = 0 IC = 0 IE = 0 IB = 0 IC = 0 IB = 0.5A IB = 0.5A VCE = 2V VCE = 0.6V VCE = 2V VCE = 5V Min. Typ. 0.02 0.05 Max. Unit 10 10 µA 120 60 6 0.4 1.3 100 75 40 70 80 100 300 40 500 pF 100 0.6 1.2 µs 150 MHz − 1 1.6 V Collector – Emitter Sustaining Voltage IC = 100mA fT* CEBO CCBO ton toff Transition Frequency Emitter – Base Capacitance Collector – Base Capacitance Turn on Time Turn off Time * Pulse Duration = 300µs,duty cycle ≤ 2%. THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient 35 200 °C/W °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5569 Issue 1