BFX34_10

HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • • • • Silicon Epitaxial NPN Transistor High Speed, Low Saturation Switch Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IB IC ICM PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Base Current Continuous Collector Current Peak Repetitive Collector Current TA = 25°C Total Power Dissipation at TC = 25°C Junction Temperature Range Storage Temperature Range 120V 60V 6V 1.0A 2A 5A 870mW 5W 200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Max. 200 35 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5569 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CBO V(BR)CEO VEBO (1) (1) Parameters Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter - Base Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current Test Conditions IC = 5mA IC = 10mA IE = 1.0mA IC = 5A VCE = 60V VEB = 4V IC = 1.0A VBE = 0 IB = 0 IC = 0 IB = 0.5A Min. 120 60 6 Typ. Max. Unit (1) V 0.4 1.3 1.0 1.6 10 10 µA VCE(sat) VBE(sat) ICES IEBO (1) (1) VBE = 0 IC = 0 VCE = 2V VCE = 0.6V VCE = 2V 40 0.02 0.05 100 75 80 hFE DC Current Gain IC = 1.5A IC = 2A 150 DYNAMIC CHARACTERISTICS fT Cobo Cibo ton toff Transition Frequency Output Capacitance Input Capacitance Turn on Time Turn off Time IC = 0.5A f = 20MHz VCB = 10V VEB = 0.5V VCC = 20V IB1= -IB2 = 50mA f = 1.0MHz f = 1.0MHz IC = 0.5A 40 300 100 pF 500 0.6 1.2 µS VCE = 5V 70 100 MHz Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 2 of 3 HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO39 (TO-205AD) METAL PACKAGE Underside Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5569 Issue 2 Page 3 of 3