BFY50

BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 6.10 (0.240) 6.60 (0.260) Description 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO39 PACKAGE (TO-205AD) Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PTOT Tstg,Tj Rj-case Rj-amb Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Collector Peak Current Total Power Dissipation @ Tamb ≤ 25°C @ Tcase ≤ 25°C Storage and Operatuing Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 80V 35V 6V 1A 1.5A 0.8W 5W –65 to 200°C 35°C / W 218°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Numer 3085 Issue 1 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO* V(BR)EBO* ICBO IEBO VCE(sat) VBE(sat) Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Test Conditions IC = 100µA IC = 0 VCB = 60V VEB = 5V IC = 150mA IC = 1A IC = 150mA IC = 1A IC = 10mA IC = 150mA IC = 1mA IE = 0 IB = 0 IE = 100µA IE = 0 TC = 100°C IC = 0 TC = 100°C IE = 15mA IB = 0.1A IB = 15mA IB = 0.1A VCE = 10V VCE = 10V VCE = 10V Min. 80 35 6 Typ. Max. Unit V 50 2.5 50 2.5 nA µA nA µA V V Collector – Emitter Breakdown Voltage IC = 30mA 0.14 0.7 0.95 1.5 20 30 15 40 55 30 0.2 1 1.3 2 hFE* DC Current Gain — DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter hfe hie hrE hoe Test Conditions VCE = 6V VCE = 6V VCE = 5V VCE = 5V VCE = 5V VCB = 10V VCE = 10V IB1= 15mA IC = 1mA IC = 10mA IC = 10mA IC = 10mA IC = 10mA IE = 0 IC = 50mA VBE = -2V f = 1kHz f = 1KHz f = 1.KHz f = 1.KHz f = 1.KHz f = 1.MHz Min. Typ. 25 45 180 Max. Unit — Ω 55 x10.-6 — µS pF MHz Small Signal Current Gain Imput Impedance Reverse Voltage Ratio Output Admittance Collector -Base Capacitance Transistion Frequency Delay Time Rise Time Storage Time Fall Time 30 10 60 100 15 40 300 60 Ccbo fT td tr ts tf IC = 150mA VCC = 10V IC = 150mA VCC = 10V IB1= -IB2 = 15mA ns Pulse Duration = 300µs, Duty Cycle = 1% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Numer 3085 Issue 1