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BS250CSM4

BS250CSM4

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BS250CSM4 - P-CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS ...

  • 详情介绍
  • 数据手册
  • 价格&库存
BS250CSM4 数据手册
BS250CSM4 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) FEATURES • VDSS = 45V 0.23 m (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 • ID = 0.18A • rdson = 14 ohms • Hermetic Surface Mount Package 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 PACKAGE Underside View PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate • Screening Option Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID IDM PD TSTG , TJ Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation @TA = 25°C @TA = 100°C Maximum Junction and Storage Temperature Range @TA = 25°C @TA = 100°C 45V "30V 0.15A 0.095A 0.69A 0.83W 0.32W 150°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 BS250CSM4 ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) Characteristic STATIC CHARACTERISTICS V(BR)DSS Drain – Source Breakdown Voltage VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs gos Ciss Coss Crss ton toff Gate Threshold Voltage Gate – Body Leakage Zero Gate Voltage Drain Current On State Drain Current1 Drain – Source On-State Resistance1 Forward Transconductance1 Common Source Output Conductance Input capacitance Output capacitance Reverse transfer capacitance Turn–on Time Turn-off Time Test Conditions VGS = 0V VDS = VGS VGS = "15V VDS = 36V VDS = 10V VGS = 10V VDS = -10V VDS = -7.5V VGS = 0V VDS = 25V f = 1MHz VDD = 25V ID = 200mA VGEN = 10V RL = 120W RG = 25W (Switching time is Min. ID = 100mA ID = 1mA VDS = 0V VGS = 0V TJ = 125°C VGS = 10V ID = 0.2A TJ = 125°C ID = 0.2A ID = -0.1A 100 0.2 45 1 Typ. 60 2.7 "1 Max. Unit 3.5 "20 0.5 2000 14 28 V nA mA A W mS 600 25 15 4 16 60 25 8 mS pF ns 15 essentially independent of operating temp.) NOTES: 1) Pulse Test: Pulse Width = 300ms , Duty Cycle £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00
BS250CSM4
1. 物料型号: - 型号为BS250CSM4。

2. 器件简介: - 该器件为P沟道增强型MOSFET,采用陶瓷表面贴装封装,适用于高可靠性机械数据应用。

3. 引脚分配: - PAD 1 - Drain(漏极) - PAD 2 - N/C(无连接) - PAD 3 - Source(源极) - PAD 4 - Gate(栅极)

4. 参数特性: - 漏源电压(V_DSS):45V - 漏极电流(I_D):0.18A - 导通电阻(r_dson):14欧姆

5. 功能详解: - 该器件具有全密封表面贴装封装,提供筛选选项。

6. 应用信息: - 适用于需要高可靠性和机械数据保护的应用场合。

7. 封装信息: - 封装类型为LCC3,具体尺寸和封装细节在文档中有图形描述。
BS250CSM4 价格&库存

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