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BSS76

BSS76

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BSS76 - HIGH VOLTAGE PNP SILICON TRANSISTOR - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
BSS76 数据手册
LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) P BSS76 HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES • Hermetic Metal Package • Screening Options Available 0.48 (0.019) 0.41 (0.016) dia. 12.7 (0.500) min. APPLICATIONS: All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN specifications 3 2 1 2.54 (0.100) Nom. TO–18 (TO-206AA) PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RθJC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation TA = 25°C Derate above 25°C TC = 25°C Derate above 25°C Operating Junction & Storage Temperature Range Thermal Resistance, Junction – Case -300V -300V -5V -0.5A 0.5W 2.86mW/°C 2.5W 14.3mW/°C -65 to 200°C 70°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5747 Issue 1 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = -10mA IB = 0 Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current IC = -100µA IE = 100µA VCB = -250V VCE = -300V VBE = -5V VCE = -1V hFE DC Current Gain VCE = -10V VCE = -10V VCE = -10V VCE(sat) VBE(sat) Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage IC = -10mA IC = -30mA IC = -10mA IC = -30mA IC = -20mA f = 20MHz IE = 0 f = 1MHz IC = 0 f = 1MHz IB1 = -10mA VCC = -100V IB2 = -10mA VCC = -100V IC = -50mA IC = -50mA VEB = -0.5V VCB = -20V IE = 0 IC = 0 IE = 0 IB = 0 IC = 0 IC = -1mA IC = -10mA IC = -30mA IC = -100mA IB = -1mA IB = -3mA IB = -1mA IB = -3mA VCE = -20V 30 35 35 45 50 55 40 -0.15 -0.25 -0.3 -0.4 -0.8 -0.9 V V 150 — Min. -300 -300 -6 -50 -500 -50 nA V Typ. Max. Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BSS76 ON CHARACTERISTICS DYNAMIC CHARACTERISTICS fT Cob Cib ton toff Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn–On Time Turn–Off Time 50 110 3.5 pF 45 100 ns 400 200 MHz * Pulse Test: tp ≤ 300µs , d ≤ 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5747 Issue 1
BSS76
1. 物料型号:BSS76

2. 器件简介:BSS76是一款高压PNP硅晶体管,采用密封金属封装,具有不同的筛选选项。

3. 引脚分配:TO-18(TO-206AA)封装,引脚1为发射极(Emitter),引脚2为基极(Base),引脚3为集电极(Collector)。

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):-300V - VCEO(集电极-发射极电压):-300V - VEBO(发射极-基极电压):-5V - Ic(连续集电极电流):-0.5A - PD(总器件耗散功率):TA=25°C时为0.5W,Tc=25°C时为2.5W - TJ,TSTG(工作结与存储温度范围):-65至200°C - ReJC(结-壳热阻):70°C/W

5. 功能详解:BSS76晶体管可以按照BS、CECC和JAN规范的要求进行处理,适用于需要密封和高电压应用的场合。

6. 应用信息:适用于需要密封和高电压的应用场合,具体应用未在文档中详细说明。

7. 封装信息:采用TO-18(TO-206AA)封装,这是一种常见的小功率晶体管封装形式。
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