BSW67A

BSW67A MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SILICON NPN PLANAR TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES • VCBO = 120V • VCEO = 120V • IC = 1.0A 2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 DESCRIPTION 45° Underside View TO39 PACKAGE (TO-205AD) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector General Purpose NPN Transistor in a Hermetic TO39 Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO IC ICM PTOT PTOT PTOT Tstg Tj RθJC RθJA Collector – Base Voltage (open emitter) Collector – Emitter Voltage (open base) Collector Current (d.c.) Collector Current (peak value) Total Device Dissipation @ Tamb ≤ 45°C Total Device Dissipation @ TC ≤ 25°C Total Device Dissipation @ TC ≤ 100°C Storage Temperature Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 120V 120V 1.0A 2A 0.7W 5W 2.85W –65 to 200°C 200°C 35°C / W 220°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7881 Issue 1 BSW67A ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter V(BR)CEO* V(BR)CBO* V(BR)EBO* ICBO Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Test Conditions IB = 0 IE = 0 IC = 0 IE = 0 IE = 0 IB = 0.01A IB = 0.05A IB = 0.15A IB = 0.01A IB = 0.05A IB = 0.15A VCE = 5V VCE = 5V VCE = 5V IC = 100μA IE = 100μA VCB = 60V VCB = 60V Tamb = 150°C IC = 0.1A Min. 120 120 6 Typ. Max. Unit V V V 0.1 50 0.15 0.5 1.0 0.9 1.1 1.2 V V μA Collector – Emitter Breakdown Voltage IC = 10mA VCE(sat)* Collector – Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 0.1A VBE(sat)* Base – Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 0.1A 40 30 15 — hFE* DC Current Gain IC = 0.5A IC = 1.0A t* Pulse test tp = 300μs , δ ≤ 1.5% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter fT Cobo Cibo ton toff Transition Frequency Output Capacitance Input Capacitance Turn–On Time Turn–Off Time Test Conditions IC = 100mA VCE = 20V VCB = 10V VEB = 0 IC = 0.5A IE = 0 IE = 0 VCC = 20V f = 35MHz f = 1.0MHz f = 1.0MHz Min. 50 Typ. Max. Unit MHz 20 300 pF pF μs 0.3 1.0 IB1 =- IB2 = 0.05A Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 7881 Issue 1