BSW68

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • • Hermetic TO-39 Metal package. Ideally suited for Switching and General Purpose Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 150V 150V 6V 1.0A 2A 0.795W 4.5mW/°C 5W 28.6mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJA RθJC Parameters Thermal Resistance, Junction To Ambient Thermal Resistance, Junction To Case Min. Typ. Max. 220 35 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 6056 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO ICBO (1) Parameters Collector-Emitter Breakdown Voltage Collector Cut-Off Current Test Conditions IC = 10mA VCB = 75V IB = 0 IE = 0 TA = 150°C IC = 0.1A IB = 0.01A IB = 0.05A IB = 0.15A IB = 0.01A IB = 0.05A IB = 0.15A VCE = 5V VCE = 5V VCE = 5V Min. 150 Typ Max. Units V 0.1 50 0.15 0.5 1.0 0.9 1.1 1.2 40 30 15 µA VCE(sat) (1) Collector-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 0.1A V VBE(sat) (1) Base-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 0.1A hFE (1) Forward-current transfer ratio IC = 0.5A IC = 1.0A DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 100mA f = 1.0MHz Output Capacitance VCB = 10V f = 1.0MHz Input Capacitance VEB = 0V f = 1.0MHz Turn-On Time IC = 0.5A IB1 = 0.05A IC = 0.5A VCC = 20V VCC = 20V 1.0 µs 3 IC = 0 1000 IE = 0 35 pF VCE = 20V 30 MHz Cobo Cibo ton toff Turn-Off Time IB1 = - IB2 = 0.05A Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 6056 Issue 2 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 6056 Issue 2 Page 3 of 3