BUL47A

BUL47A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • • • • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. TO3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC Ptot Tstg Rth Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Thermal Resistance (junction-case) 600V 300V 10V 40A 200W –65 to 175°C 0.75°CW Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document 3880 Issue 1 BUL47A ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO Test Conditions IB = 0 IE = 0 IC = 0 IE = 0 TC = 125°C IB = 0 VEB = 5V IC = 1A VCE = 300V IC = 0 TC = 125°C VCE = 4V VCE = 4V VCE = 4V IB = 6A IB = 1A VCE = 4V f = 10MHz Min. 300 600 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 100mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current IC = 1mA IE = 1mA VCB = 600V V 10 100 100 10 100 µA µA µA 15 20 25 0.7 1.1 V — hFE* VCE(sat)* VBE(sat)* DC Current Gain IC = 10A IC = 25A Collector – Emitter Saturation Voltage IC = 30A Base – Emitter Saturation Voltage DYNAMIC CHARACTERISTICS IC = 10A IC = 100 f = 10MHz VCB = 20V ft Cob Transition Frequency Output Capacitance 20 260 MHz pF * Pulse test tp = 300µs , δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document 3880 Issue 1