BUL54A-TO5

SILICON POWER NPN TRANSISTOR BUL54A-TO5 • • • • • Advanced Distributed Base design High Voltage Fast Switching High Energy Rating Screening Options Available Features: Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PTOT TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (Ic = 0) Continuous Collector Current Tc = 25°C Total Power Dissipation at Operating Junction Temperature Range Storage Temperature Range 1000V 500V 10V 4A 20W -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Max 6.25 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5977 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON POWER NPN TRANSISTOR BUL54A-TO5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols ICBO ICEO IEBO V(BR)CEO (1) Parameters Collector-Base Cut-Off Current Collector-Emitter Cut- off current Emitter-Base Cut-Off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Test Conditions VCB = 1000V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 10mA IC = 100µA IE = 100µA IC = 100mA IB =20mA IB =0.1A IB = 0.2A IB = 0.1A IB = 0.2A VCE = 5V VCE = 5V VCE = 1.0V TC = 125°C TC = 125°C VCE = 500V Min Typ Max 10 100 100 10 100 Units µA 500 1000 10 0.05 0.15 0.3 0.8 0.9 20 12 5 50 15 8 5 0.1 0.2 0.5 1.0 1.1 V V(BR)CBO V(BR)EBO (1) VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A IC = 1.0A VBE(sat) (1) Base-Emitter Saturation Voltage IC = 0.5A IC = 1.0A IC = 0.1A hFE (1) Forward-current transfer ratio IC = 0.5A IC = 1.0A DYNAMIC CHARACTERISTICS fT Cobo Transition Frequency Output Capacitance IC = 0.2A VCB = 20V VCE = 4V f = 1.0MHz 20 20 MHz pF Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5977 Issue 2 Page 2 of 3 SILICON POWER NPN TRANSISTOR BUL54A-TO5 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO-5 (TO-205AA) Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5977 Issue 2 Page 3 of 3